UPC2746T-E3 NEC, UPC2746T-E3 Datasheet

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UPC2746T-E3

Manufacturer Part Number
UPC2746T-E3
Description
RF Amplifier REORD 551-UPC2746TB SO-6 WB AMP MMIC
Manufacturer
NEC
Datasheet
1.UPC2746T-E3.pdf (5 pages)

Specifications of UPC2746T-E3

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
UPC2746T-E3
Manufacturer:
NEC
Quantity:
18 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
UPC2746T-E3
Manufacturer:
NEC
Quantity:
1 500
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
UPC2746T-E3
Manufacturer:
NEC
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
UPC2746T-E3(KB)
Manufacturer:
NEC
Quantity:
3 007
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
UPC2746T-E3-A
Manufacturer:
NEC
Quantity:
20 000
DESCRIPTION
Note: 1. The gain at f
• WIDE FREQUENCY RESPONSE: 1500 MHz
• LOW VOLTAGE OPERATION: 3 V NOMINAL (1.8 MIN)
• LOW POWER CONSUMPTION: 22.5 mW TYP
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
FEATURES
The UPC2746T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with f
This device is suitable as a buffer amplifier for cellular and
cordless telephone applications. Operating on a 3 volt supply
(1.8 volt minimum) this IC is ideally suited for hand-held,
portable designs.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
SYMBOLS
R
RL
ISOL
P
OIP
TH (J-A)
RL
I
G
f
NF
CC
SAT
U 1
OUT
S
IN
3
Circuit Current (no signal)
Small Signal Gain,
Upper Limit Operating Frequency, V
Saturated Output Power,
Noise Figure,
Input Return Loss,
Output Return Loss,
Isolation,
SSB Output Third Order Intercept
Thermal Resistance (Junction to Ambient)
U
is 3 dB down from the gain at 100 MHz.
Free Air
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
Si MMIC WIDEBAND AMPLIFIER
PARAMETERS AND CONDITIONS
T
PACKAGE OUTLINE
approaching 20 GHz.
PART NUMBER
, f1 = 500 MHz, f2 = 510 MHz, V
V
V
f = 500 MHz, V
f = 1000 MHz, V
f = 500 MHz, V
f = 500 MHz, V
f = 1000 MHz, V
f = 500 MHz, V
f = 500 MHz, V
f = 1000 MHz, V
f = 500 MHz, V
f = 500 MHz, V
f = 1000 MHz, V
f = 500 MHz, V
f = 500 MHz, V
f = 1000 MHz, V
f = 500 MHz, V
f = 500 MHz, V
f = 1000 MHz, V
f = 500 MHz, V
f1 = 1000 MHz, f2 = 1010 MHz, V
f1 = 500 MHz, f2 = 502 MHz, V
CC
CC
V
CC
= 3.0 V
= 1.8 V
CC
= 1.8 V
= 3.0 V
(T
A
= 25 C, Z
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
= 3.0 V
= 1.8 V
= 3.0 V
= 1.8 V
= 3.0 V
= 1.8 V
= 3.0 V
= 1.8 V
= 3.0 V
= 1.8 V
= 3.0 V
= 1.8 V
= 3.0 V
= 3.0 V
= 3.0 V
= 3.0 V
= 3.0 V
= 3.0 V
L
= Z
S
= 50 )
3 V, 1500 MHz
CC
CC
CC
= 3.0 V
= 1.8 V
= 3.0 V
18
16
20
14
0
California Eastern Laboratories
UNITS
dBm
dBm
dBm
dBm
dBm
dBm
GHz
GHz
mA
mA
C/W
C/W
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
V
GAIN vs. FREQUENCY
CC
NOISE FIGURE AND
Frequency, f (MHz)
= 3.0 V, I
NF
MIN
5.0
1.1
5.5
16
10
40
1000
-3
CC
= 7.5 mA
G
UPC2746T
S
UPC2746T
TO6
TYP
18.5
7.5
4.5
1.5
1.1
4.0
4.2
5.0
8.5
8.5
9.5
19
14
13
10
10
45
38
37
+5
+6
-1
-8
-2
0
2000
5.5
5.0
4.5
4.0
MAX
10.0
5.5
21
620
230

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UPC2746T-E3 Summary of contents

Page 1

... SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2746T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with f This device is suitable as a buffer amplifier for cellular and cordless telephone applications ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC I Total Supply Current CC P Input Power IN P Total Power Dissipation Operating Temperature OP T Storage Temperature STG Notes: 1. Operation in excess of any one ...

Page 3

TYPICAL PERFORMANCE CURVES RETURN LOSS vs. FREQUENCY 1 out - 3.0 V 1.8 V -20 -30 0.1 0.3 Frequency, f (GH POWER vs. FREQUENCY 0 P SAT -4.0 P 1dB V ...

Page 4

TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 (GHz) MAG ANG 0.1 0.213 164.0 0.2 0.204 146.5 0.3 0.197 130.0 0.4 0.201 117.8 0.5 0.209 106.1 0.6 0.219 93.9 0.7 0.231 87.3 ...

Page 5

... Note: All dimensions are typical unless otherwise specified. EQUIVALENT CIRCUIT IN ORDERING INFORMATION PART NUMBER UPC2746T-E3 Note: Embossed Tape wide. EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA · CALIFORNIA EASTERN LABORATORIES, INC DATA SUBJECT TO CHANGE WITHOUT NOTICE ...

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