KSC2223YMTF Fairchild Semiconductor, KSC2223YMTF Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single KSC2223YMTF
Manufacturer Part Number
KSC2223YMTF
Description
TRANSISTOR NPN 20V 20MA SOT-23
Manufacturer
Fairchild Semiconductor
Specifications of KSC2223YMTF
Transistor Type
NPN
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 1mA, 6V
Power - Max
150mW
Frequency - Transition
600MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
©2002 Fairchild Semiconductor Corporation
High Frequency Amplifier
• Very small size to assure good space factor in Hybrid IC applications
• f
• C
• NF=3dB (TYP) at f=100MHz
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
I
h
V
C
f
C
NF
C
CBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
T
ob
c·rbb
ob
=600MHz (TYP) at I
Symbol
=1pF (TYP) at V
(sat)
Classification
Classification
h
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Time Constant
Noise Figure
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
CB
C
=6V
=1mA
Parameter
T
a
40 ~ 80
=25 C unless otherwise noted
T
R
Parameter
a
=25 C unless otherwise noted
Marking
KSC2223
V
V
I
V
V
V
f=31.9MHz
V
f=100MHz, R
C
CB=
CE
CB
CE
CB
CE
=10mA, I
H5 O
=6V, I
=6V, I
=6V, I
=6V, I
=6V, I
30V, I
Test Condition
C
E
C
C
C
E
B
=0, f=1MHz
=1mA
=1mA
=1mA
=1mA
=0
=1mA
S
=50
60 ~ 120
O
h
FE
grade
Min.
1. Base 2. Emitter 3. Collector
400
40
-55 ~ 150
3
Value
150
150
30
20
20
4
Typ.
600
0.1
90
12
1
3
1
90 ~ 180
Max.
180
0.1
0.3
Y
SOT-23
Rev. A3, September 2002
2
Units
mW
mA
V
V
V
C
C
Units
MHz
pF
dB
ps
V
A
Related parts for KSC2223YMTF
KSC2223YMTF Summary of contents
... Collector Emitter Saturation Voltage CE C Output Capacitance ob f Current Gain Bandwidth Product T C Time Constant c·rbb NF Noise Figure h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC2223 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition V 30V CB =6V, I =1mA CE C ...
... Typical Characteristics [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 1000 100 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 3. DC current Gain 2 1000 100 10 1 0.1 0.0 0.2 0.4 0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 1000 100 0 1mA C 1 0.1 0.01 100 0.1 Figure 4 ...
... I [mA], EMITTER CURRENT E Figure 7. Noise Figure = 0.1 0 [V], COLLECTOR-BASE VOLTAGE CB V [V], EMITTER-BASE VOLTAGE EB Figure 9. Input and Output Capacitance ©2002 Fairchild Semiconductor Corporation (Continued) 10000 100MHz 1000 100 10 0.1 Figure 8. Current Gain Bandwidth Product 200 f = 1MHz 180 160 140 120 C (I =0) ob ...
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A3, September 2002 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...
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