TRANSISTOR NPN 60V 700MA TO-92L

KSC2331YBU

Manufacturer Part NumberKSC2331YBU
DescriptionTRANSISTOR NPN 60V 700MA TO-92L
ManufacturerFairchild Semiconductor
KSC2331YBU datasheet
 

Specifications of KSC2331YBU

Transistor TypeNPNCurrent - Collector (ic) (max)700mA
Voltage - Collector Emitter Breakdown (max)60VVce Saturation (max) @ Ib, Ic700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce120 @ 50mA, 2VPower - Max1W
Frequency - Transition50MHzMounting TypeThrough Hole
Package / CaseTO-92-3 (Long Body), TO-226Lead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-  
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Low Frequency Amplifier & Medium Speed
Switching
• Complement to KSA931
• High Collector-Base Voltage : V
CBO
• Collector Current : I
=700mA
C
• Collector Dissipation : P
=1W
C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current
C
P
Collector Power Dissipation
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
BV
Collector-Base Breakdown Voltage
CBO
BV
Collector-Emitter Breakdown Voltage
CEO
BV
Emitter-Base Breakdown Voltage
EBO
I
Collector Cut-off Current
CBO
I
Emitter Cut-off Current
EBO
h
DC Current Gain
FE
V
(sat)
Collector-Emitter Saturation Voltage
CE
V
(sat)
Base-Emitter Saturation Voltage
BE
f
Current Gain Bandwidth Product
T
C
Output Capacitance
ob
h
Classification
FE
Classification
h
FE
©2002 Fairchild Semiconductor Corporation
KSC2331
=80V
T
=25 C unless otherwise noted
a
Parameter
T
=25 C unless otherwise noted
a
Test Condition
I
=100 A, I
=0
C
E
I
=10mA, I
=0
C
B
I
=10 A, I
=0
E
C
V
=60V, I
=0
CB
E
V
=5V, I
=0
EB
C
V
=2V, I
=50mA
CE
C
I
=500mA, I
=50mA
C
B
I
=500mA, I
=50mA
C
B
V
=10V, I
=50mA
CE
C
V
=10V, I
=0, f=1MHz
CB
E
R
40 ~ 80
70 ~ 140
TO-92L
1
1. Emitter 2. Collector 3. Base
Ratings
Units
80
V
60
V
8
V
700
mA
1
W
150
C
-55 ~ 150
C
Min.
Typ.
Max.
Units
80
60
8
0.1
0.1
40
240
0.2
0.7
0.86
1.20
30
50
MHz
8
O
Y
120 ~ 240
Rev. A2, September 2002
V
V
V
A
A
V
V
pF

KSC2331YBU Summary of contents

  • Page 1

    ... FE V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC2331 =80V T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =10mA ...

  • Page 2

    ... COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic (sat) BE 0.1 V (sat [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10000 1000 100 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 240 200 I = 1.4mA 1.2mA 160 1.0mA B 120 I = 0.8mA 0.6mA 0.4mA 0.2mA ...

  • Page 3

    ... Package Dimensions 0.50 0.10 ©2002 Fairchild Semiconductor Corporation TO-92L 4.90 0.20 0.70MAX. 0.80 0.10 1.00MAX. 1.27TYP [1.27 ] 0.20 2.54 TYP 3.90 0.20 0.45 0.10 Dimensions in Millimeters Rev. A2, September 2002 ...

  • Page 4

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...