TRANSISTOR PNP 45V 100MA TO-92

BC557B

Manufacturer Part NumberBC557B
DescriptionTRANSISTOR PNP 45V 100MA TO-92
ManufacturerFairchild Semiconductor
BC557B datasheet
 

Specifications of BC557B

Transistor TypePNPCurrent - Collector (ic) (max)100mA
Voltage - Collector Emitter Breakdown (max)45VVce Saturation (max) @ Ib, Ic650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce200 @ 2mA, 5VPower - Max500mW
Frequency - Transition150MHzMounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226ConfigurationSingle
Transistor PolarityPNPMounting StyleThrough Hole
Collector- Emitter Voltage Vceo Max45 VEmitter- Base Voltage Vebo- 5 V
Continuous Collector Current- 0.1 AMaximum Dc Collector Current0.1 A
Power Dissipation0.5 WMaximum Operating Frequency320 MHz
Maximum Operating Temperature+ 150 CDc Collector/base Gain Hfe Min110
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other namesBC557B
BC557BFS
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Switching and Amplifier
• High Voltage: BC556, V
= -65V
CEO
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
P
Collector Power Dissipation
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
I
Collector Cut-off Current
CBO
h
DC Current Gain
FE
V
Collector-Emitter Saturation Voltage
CE
(sat)
V
(sat)
Collector-Base Saturation Voltage
BE
V
(on)
Base-Emitter On Voltage
BE
f
Current Gain Bandwidth Product
T
C
Output Capacitance
ob
NF
Noise Figure
: BC556/557/558
: BC559/560
: BC559
: BC560
h
Classification
FE
Classification
h
FE
©2002 Fairchild Semiconductor Corporation
BC556/557/558/559/560
T
=25 C unless otherwise noted
a
Parameter
: BC556
: BC557/560
: BC558/559
: BC556
: BC557/560
: BC558/559
T
=25 C unless otherwise noted
a
Test Condition
V
= -30V, I
=0
CB
E
V
= -5V, I
=2mA
CE
C
I
= -10mA, I
= -0.5mA
C
B
I
= -100mA, I
= -5mA
C
B
I
= -10mA, I
= -0.5mA
C
B
I
= -100mA, I
= -5mA
C
B
V
= -5V, I
= -2mA
CE
C
V
= -5V, I
= -10mA
CE
C
V
= -5V, I
= -10mA, f=10MHz
CE
C
V
= -10V, I
=0, f=1MHz
CB
E
V
= -5V, I
= -200 A
CE
C
f=1KHz, R
=2K
G
V
= -5V, I
= -200 A
CE
C
R
=2K
f=30~15000MHz
G
A
110 ~ 220
200 ~ 450
TO-92
1
1. Collector 2. Base 3. Emitter
Value
Units
-80
V
-50
V
-30
V
-65
V
-45
V
-30
V
-5
V
-100
mA
500
mW
150
-65 ~ 150
Min.
Typ.
Max.
-15
110
800
-90
-300
-250
-650
-700
-900
-600
-660
-750
-800
150
6
2
10
1
4
1.2
4
1.2
2
B
C
420 ~ 800
Rev. A2, August 2002
C
C
Units
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB

BC557B Summary of contents

  • Page 1

    ... BE f Current Gain Bandwidth Product T C Output Capacitance ob NF Noise Figure : BC556/557/558 : BC559/560 : BC559 : BC560 h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation BC556/557/558/559/560 T =25 C unless otherwise noted a Parameter : BC556 : BC557/560 : BC558/559 : BC556 : BC557/560 : BC558/559 T =25 C unless otherwise noted a Test Condition V = -30V ...

  • Page 2

    ... Figure 1. Static Characteristic - - (sat -0.1 V (sat) CE -0.01 -0 [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 V [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 1000 = -350 -300 A B 100 I = -250 -200 -150 -100 - -0.1 -12 -14 -16 -18 -20 -100 ...

  • Page 3

    ... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, August 2002 ...

  • Page 4

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...