KSC2331YTA Fairchild Semiconductor, KSC2331YTA Datasheet

TRANSISTOR NPN 60V 700MA TO-92L

KSC2331YTA

Manufacturer Part Number
KSC2331YTA
Description
TRANSISTOR NPN 60V 700MA TO-92L
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSC2331YTA

Transistor Type
NPN
Current - Collector (ic) (max)
700mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 50mA, 2V
Power - Max
1W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2002 Fairchild Semiconductor Corporation
Low Frequency Amplifier & Medium Speed
Switching
• Complement to KSA931
• High Collector-Base Voltage : V
• Collector Current : I
• Collector Dissipation : P
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
=700mA
C
=1W
Parameter
CBO
=80V
T
a
=25 C unless otherwise noted
T
Parameter
40 ~ 80
a
=25 C unless otherwise noted
R
KSC2331
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
CB
EB
CE
CE
CB
=100 A, I
=10mA, I
=10 A, I
=500mA, I
=500mA, I
=5V, I
=60V, I
=2V, I
=10V, I
=10V, I
Test Condition
C
C
C
=0
B
E
=50mA
C
E
E
=0
=0
=0
B
B
=50mA
=0, f=1MHz
=0
=50mA
=50mA
70 ~ 140
O
1. Emitter 2. Collector 3. Base
1
Min.
80
60
40
30
8
-55 ~ 150
Ratings
700
150
80
60
8
1
Typ.
0.86
0.2
50
8
120 ~ 240
TO-92L
Max.
1.20
240
0.1
0.1
0.7
Y
Rev. A2, September 2002
Units
mA
W
V
V
V
C
C
Units
MHz
pF
V
V
V
V
V
A
A

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KSC2331YTA Summary of contents

Page 1

... FE V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC2331 =80V T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =10mA ...

Page 2

... COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic (sat) BE 0.1 V (sat [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10000 1000 100 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 240 200 I = 1.4mA 1.2mA 160 1.0mA B 120 I = 0.8mA 0.6mA 0.4mA 0.2mA ...

Page 3

... Package Dimensions 0.50 0.10 ©2002 Fairchild Semiconductor Corporation TO-92L 4.90 0.20 0.70MAX. 0.80 0.10 1.00MAX. 1.27TYP [1.27 ] 0.20 2.54 TYP 3.90 0.20 0.45 0.10 Dimensions in Millimeters Rev. A2, September 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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