KSC2310YTA Fairchild Semiconductor, KSC2310YTA Datasheet

TRANSISTOR NPN 150V 50MA TO-92L

KSC2310YTA

Manufacturer Part Number
KSC2310YTA
Description
TRANSISTOR NPN 150V 50MA TO-92L
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSC2310YTA

Transistor Type
NPN
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 10mA, 5V
Power - Max
800mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSC2310YTA
Manufacturer:
SAMSUNG
Quantity:
1 550
©2002 Fairchild Semiconductor Corporation
High Voltage Power Amplifier
• Collector-Base Voltage : V
• Current Gain Bandwidth Product : f
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
h
V
f
C
C
CBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
ob
CBO
CEO
EBO
Symbol
(sat)
Classification
Classification
h
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
CBO
=200V
T
=100MHz
T
40 ~ 80
a
=25 C unless otherwise noted
T
R
Parameter
a
=25 C unless otherwise noted
KSC2310
I
I
I
V
V
I
V
V
C
C
E
C
CB
CE
CE
CB
=100 A, I
=5mA, I
=100 A, I
=10mA, I
=200V, I
=5V, I
=30V, I
=10V, I
Test Condition
B
C
=0
=10mA
B
C
E
E
C
E
=1mA
=10mA
=0, f=1MHz
=0
=0
=0
70 ~ 140
O
1. Emitter 2. Collector 3. Base
1
Min.
200
150
40
5
-55 ~ 150
Ratings
200
150
800
150
50
5
Typ.
100
3.5
120 ~ 240
TO-92L
Max.
240
Y
0.1
0.5
5
Rev. A2, September 2002
Units
mW
mA
V
V
V
C
C
Units
MHz
pF
V
V
V
V
A

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KSC2310YTA Summary of contents

Page 1

... CBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC2310 =100MHz T T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =5mA ...

Page 2

... Figure 1. Static Characteristic 10 V (sat (sat) CE 0.1 0.01 0 [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 *300ms 100 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 1000 I = 300 200 A B 100 I = 150 100 1000 100 10 1 0.1 10 100 Figure 4 ...

Page 3

... Package Dimensions 0.50 0.10 ©2002 Fairchild Semiconductor Corporation TO-92L 4.90 0.20 0.70MAX. 0.80 0.10 1.00MAX. 1.27TYP [1.27 ] 0.20 2.54 TYP 3.90 0.20 0.45 0.10 Dimensions in Millimeters Rev. A2, September 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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