BSR50 Fairchild Semiconductor, BSR50 Datasheet

TRANSISTOR DARL NPN 45V TO-92

BSR50

Manufacturer Part Number
BSR50
Description
TRANSISTOR DARL NPN 45V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BSR50

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
1.6V @ 4mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
15 A
Maximum Collector Cut-off Current
0.05 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSR50
Manufacturer:
FSC
Quantity:
1 596
Part Number:
BSR50 DZ
Manufacturer:
FAIRCHILD
Quantity:
374
©2002 Fairchild Semiconductor Corporation
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at
• Sourced from Process 06.
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
V
V
V
I
T
BV
BV
BV
I
I
h
V
V
P
R
R
C
CBO
EBO
collector currents to 0.5A.
Symbol
FE
J
CEO
CBO
EBO
CE
BE
D
Symbol
, T
JC
JA
CEO
CBO
EBO
Symbol
(sat)
(sat)
STG
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Storage Temperature
Parameter
T
A
T
=25 C unless otherwise noted
A
=25 C unless otherwise noted
T
Parameter
A
=25 C unless otherwise noted
Parameter
BSR50
I
I
I
V
V
V
V
I
I
I
I
C
C
E
C
C
C
C
CB
EB
CE
CE
= 100 A, I
= 10mA, I
= 100 A, I
= 500mA, I
= 1.0A, I
= 500mA, I
= 1.0mA, I
= 4.0V, I
= 45V, I
= 10V, I
= 10V, I
Test Condition
B
B
E
C
C
C
= 4.0mA
B
C
B
B
B
= 0
= 0
= 150mA
= 0.5A
= 0
= 0
= 0
= 4.0mA
= 500 A
= 500 A
1. Emitter 2. Collector 3. Base
1,000
2,000
1
Min.
45
60
5
-55 ~ 150
Ratings
1.5
45
60
5
Typ.
Max.
83.3
625
200
5.0
TO-92
Max.
1.3
1.6
0.9
2.2
50
50
Units
mW/ C
Units
mW
C/W
C/W
Rev. A, May 2002
V
V
V
A
C
Units
nA
nA
V
V
V
V
V

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BSR50 Summary of contents

Page 1

... Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation BSR50 T =25 C unless otherwise noted A Parameter T =25 C unless otherwise noted A Test Condition I = 10mA 100 ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, May 2002 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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