MPS751_D26Z Fairchild Semiconductor, MPS751_D26Z Datasheet
MPS751_D26Z
Manufacturer Part Number
MPS751_D26Z
Description
TRANS PNP 60V 2A TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPS751_D26Z.pdf
(3 pages)
Specifications of MPS751_D26Z
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 2A, 2V
Power - Max
625mW
Frequency - Transition
75MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPS751_D26ZMPS751-D26Z
Manufacturer:
ON/安森美
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
Silicon PNP Transistor
• Low Saturation Voltage
Absolute Maximum Ratings
Electrical Characteristics
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
V
f
C
CBO
EBO
T
FE
J
STG
CEO
C
CE
BE
BE
Symbol
CEO
EBO
CBO
Symbol
(sat)
(sat)
(on)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Collector-Emitter Voltage
Collector Current (DC)
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
(Note 1)
T
C
a
=25 C unless otherwise noted
=25 C) (Note 2, 3)
T
Parameter
C
=25 C unless otherwise noted
MPS751
I
I
I
V
V
V
V
V
V
I
I
I
V
V
f = 100MHz
C
C
E
C
C
C
CB
EB
CE
CE
CE
CE
CE
CE
= 10mA
= 2A, I
= 100 A
= 10 A
= 1A, I
= 1A, I
= 3V
= 30V
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 5V, I
= 5V, I
Test Condition
B
B
B
= 200mA
= 100mA
= 100mA
C
C
C
C
C
C
= 50mA
= 500mA
= 1A
= 2A
= 2mA
= 50mA
1. Emitter 2. Base 3. Collector
1
Min.
- 55 ~ 150
-80
-60
75
75
75
40
75
-5
Value
625
150
-60
2
Typ.
TO-92
Max.
100
100
0.5
0.3
1.2
1
Rev. B, November 2002
Units
mW
V
A
C
C
Units
MHz
nA
nA
V
V
V
V
V
V
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MPS751_D26Z Summary of contents
Page 1
... These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150degrees C. ©2002 Fairchild Semiconductor Corporation MPS751 (Note 1) ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, November 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...