ZUMT591TC Diodes Zetex, ZUMT591TC Datasheet

TRANSISTOR PNP MED PWR SC70-3

ZUMT591TC

Manufacturer Part Number
ZUMT591TC
Description
TRANSISTOR PNP MED PWR SC70-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZUMT591TC

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 500mA, 5V
Power - Max
500mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94
FEATURES
*
*
*
APPLICATIONS
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Extremely low saturation voltage
500mW power dissipation
1 Amp continuous collector current (I
Ideally suited for space / weight critical applications
amb
=25°C
SYMBOL
V
V
V
I
I
I
V
V
V
CBO
CES
EBO
(BR)CBO
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
BE(on)
MIN.
-80
-60
-5
C
)
amb
TYP.
SYMBOL
V
V
V
I
I
I
P
T
CM
C
B
tot
j
CBO
CEO
EBO
= 25°C).
:T
stg
MAX.
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
UNIT
V
V
V
nA
nA
nA
V
V
V
V
-55 to +150
VALUE
-200
500
-80
-60
-5
-2
-1
ZUMT591
CONDITIONS.
I
I
I
V
VCE=-60V
V
I
I
I
IC=-1A, V
C
C
E
C
C
C
=-100µA, I
CB
EB
=-100µA, I
=-10mA*, I
=-500mA, I
=-1A, I
=-1A, I
=-60V
=-4V, I
C
SOT323
B
B
=-100mA*
=-100mA*
CE
C
=-0
=-5V*
E
C
B
B
UNIT
=-0
=-0
mW
mA
=-0
=-50mA*
°C
V
V
V
A
A
B
E

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ZUMT591TC Summary of contents

Page 1

SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR DRAFT SPECIFICATION ISSUE A – OCTOBER 94 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current (I APPLICATIONS * Ideally suited for space / weight critical ...

Page 2

ZUMT591 ELECTRICAL CHARACTERISTICS (at T PARAMETER Static Forward Current Transfer Ratio Transition Frequency Ouput Capacitance * Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2% NOTE This data is derived from development material and does not necessarily mean that the device ...

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