BD13610S Fairchild Semiconductor, BD13610S Datasheet
BD13610S
Manufacturer Part Number
BD13610S
Description
TRANSISTOR PNP 45V 1.5A TO-126
Manufacturer
Fairchild Semiconductor
Datasheet
1.BD14016STU.pdf
(4 pages)
Specifications of BD13610S
Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
1.25W
Mounting Type
Through Hole
Package / Case
TO-126-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1.5 A
Maximum Dc Collector Current
1.5 A
Power Dissipation
12.5 W
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Dc
N/A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BD13610S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
BD13610STU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2000 Fairchild Semiconductor International
Medium Power Linear and Switching
Applications
• Complement to BD135, BD137 and BD139 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW=350 s, duty Cycle=2% Pulsed
h
V
V
V
I
I
h
h
h
V
V
FE
V
I
I
I
P
P
T
T
CBO
EBO
CEO
B
C
CP
FE1
FE2
FE3
CBO
CEO
Symbol
CE
BE
EBO
C
J
STG
C
Symbol
(on)
(sat)
Classificntion
(sus)
Classification
h
FE3
* Collector-Emitter Sustaining Voltage
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
: BD136
: BD138
: BD140
C
a
C
=25 C unless otherwise noted
40 ~ 100
=25 C)
BD136/138/140
T
=25 C)
Parameter
C
6
=25 C unless otherwise noted
: BD138
: BD140
: BD136
: BD136
: BD138
: BD140
I
V
V
V
V
V
I
V
C
C
CB
EB
CE
CE
CE
CE
= - 500mA, I
= - 30mA, I
Test Condition
= - 5V, I
= - 30V, I
= - 2V, I
= - 2V, I
= - 2V, I
= - 2V, I
63 ~ 160
C
C
C
C
C
10
B
E
= 0
= - 5mA
= - 0.5A
= - 150mA
B
= - 0.5A
= 0
= 0
= - 50mA
1
1. Emitter
Min.
- 55 ~ 150
- 45
- 60
- 80
25
25
40
Value
- 1.5
- 3.0
- 0.5
12.5
1.25
- 45
- 60
- 80
- 45
- 60
- 80
150
2.Collector
- 5
Typ.
100 ~ 250
TO-126
16
Max.
- 0.1
- 0.5
- 10
250
- 1
3.Base
Rev. A, February 2000
Units
W
W
V
V
V
V
V
V
V
A
A
A
C
C
Units
V
V
V
V
V
A
A
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BD13610S Summary of contents
Page 1
... FE1 h FE2 h FE3 V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter ON Voltage BE * Pulse Test: PW=350 s, duty Cycle=2% Pulsed h Classificntion FE Classification h FE3 ©2000 Fairchild Semiconductor International BD136/138/140 T =25 C unless otherwise noted C Parameter : BD136 : BD138 : BD140 : BD136 : BD138 : BD140 = = =25 C unless otherwise noted C Test Condition ...
Page 2
... Figure 3. Base-Emitter Voltage 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0 100 C], CASE TEMPERATURE C Figure 5. Power Derating ©2000 Fairchild Semiconductor International -500 V = -2V CE -450 -400 -350 -300 -250 -200 -150 -100 -50 -0 -1E-3 -1000 Figure 2. Collector-Emitter Saturation Voltage -10 I MAX. (Pulsed) ...
Page 3
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...