BD437S Fairchild Semiconductor, BD437S Datasheet

TRANSISTOR NPN 45V 4A TO-126

BD437S

Manufacturer Part Number
BD437S
Description
TRANSISTOR NPN 45V 4A TO-126
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BD437S

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 200mA, 2A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 10mA, 5V
Power - Max
36W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
4 A
Power Dissipation
36 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
30
Maximum Operating Frequency
3 MHz
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BD437S
Manufacturer:
E-Switch
Quantity:
10 000
Part Number:
BD437S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
BD437S
Quantity:
55 000
©2001 Fairchild Semiconductor Corporation
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
V
V
I
I
I
V
V
P
T
T
C
CP
B
CEO
EBO
J
STG
CBO
CES
C
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
C
BD433/435/437
T
=25 C)
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
Parameter
C
=25 C unless otherwise noted
1
1. Emitter
- 65 ~ 150
Value
150
2.Collector
36
22
32
45
22
32
45
22
32
45
5
4
7
1
TO-126
3.Base
Rev. A1, June 2001
Units
W
V
V
V
V
V
V
V
V
V
V
A
A
A
C
C

Related parts for BD437S

BD437S Summary of contents

Page 1

... Emitter-Base Voltage EBO I Collector Current (DC *Collector Current (Pulse Base Current B P Collector Dissipation ( Junction Temperature J T Storage Temperature STG ©2001 Fairchild Semiconductor Corporation BD433/435/437 T =25 C unless otherwise noted C Parameter : BD433 : BD435 : BD437 : BD433 : BD435 : BD437 : BD433 : BD435 : BD437 = TO-126 1 1. Emitter 2 ...

Page 2

... Emitter Cut-off Current EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation T =25 C unless otherwise noted C Test Condition : BD433 I = 100mA BD435 : BD437 : BD433 V = 22V BD435 V ...

Page 3

... V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage 10 I MAX. (Pulsed Max. (Continuous BD433 BD435 BD437 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0.1 0.01 10 100 0.1 Figure 2. Collector-Emitter Saturation Voltage 1000 100 10 1 1.3 1.5 1.8 2.0 0.1 Figure 4 ...

Page 4

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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