BD441STU Fairchild Semiconductor, BD441STU Datasheet
BD441STU
Manufacturer Part Number
BD441STU
Description
TRANSISTOR NPN 80V 4A TO-126
Manufacturer
Fairchild Semiconductor
Datasheet
1.BD439S.pdf
(4 pages)
Specifications of BD441STU
Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
800mV @ 200mA, 2A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 500mA, 1V
Power - Max
36W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
4 A
Power Dissipation
36 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
15
Maximum Operating Frequency
3 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2001 Fairchild Semiconductor Corporation
Medium Power Linear and Switching
Applications
• Complement to BD440, BD442 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed
V
V
I
I
I
V
V
P
T
T
V
I
I
I
h
V
V
f
C
CP
B
CBO
CES
EBO
T
FE
CEO
EBO
J
STG
CBO
CES
CEO
CE
BE
Symbol
C
Symbol
(on)
(sat)
(sus)
* Collector-Emitter Sustaining Voltage
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
C
C
=25 C unless otherwise noted
T
=25 C)
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
Parameter
: BD439
: BD441
: BD441
C
: BD439
: BD441
: BD441
: BD439
: BD441
: BD439
: BD441
: BD439
: BD439
=25 C unless otherwise noted
BD439/441
I
V
V
V
V
V
V
V
V
I
V
V
V
C
C
CB
CB
CE
CE
EB
CE
CE
CE
CE
CE
CE
= 100mA, I
= 2A, I
Test Condition
= 5V, I
= 60V, I
= 80V, I
= 60V, V
= 80V, V
= 5V, I
=1V, I
= 1V, I
= 5V, I
= 1V, I
= 1V, I
B
C
= 0.2A
C
C
C
C
C
C
= 500mA
E
E
= 0
= 10mA
= 2A
= 10mA
= 2A
= 250mA
BE
BE
B
= 0
= 0
= 0
= 0
= 0
1
1. Emitter
- 65 ~ 150
Min.
60
80
20
15
40
40
25
15
3
Value
150
2.Collector
60
80
60
80
60
80
36
5
4
7
1
0.58
Typ.
130
130
140
140
TO-126
Max.
100
100
100
100
0.8
1.5
3.Base
1
Rev. A1, June 2001
Units
W
V
V
V
V
V
V
V
A
A
A
C
C
Units
MHz
mA
V
V
V
V
V
A
A
A
A
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BD441STU Summary of contents
Page 1
... DC Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation BD439/441 T =25 C unless otherwise noted C Parameter : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 = =25 C unless otherwise noted ...
Page 2
... V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage 10 I MAX. (Pulsed Max. (Continuous BD439 BD441 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0.1 0.01 0 Figure 2. Collector-Emitter Saturation Voltage 1000 100 10 1 1.3 1.5 1.8 2.0 0.1 Figure 4. Collector-Base Capacitance ...
Page 3
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...