KSC5026MOS

Manufacturer Part NumberKSC5026MOS
DescriptionTRANSISTOR NPN 800V 1.5A TO-126
ManufacturerFairchild Semiconductor
KSC5026MOS datasheets

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Specifications of KSC5026MOS

Transistor TypeNPNCurrent - Collector (ic) (max)1.5A
Voltage - Collector Emitter Breakdown (max)800VVce Saturation (max) @ Ib, Ic2V @ 150mA, 750mA
Dc Current Gain (hfe) (min) @ Ic, Vce20 @ 100mA, 5VPower - Max20W
Frequency - Transition15MHzMounting TypeThrough Hole
Package / CaseTO-126-3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-  
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KSC5026M
NPN Silicon Transistor
Features
• High Voltage and High Reliability
• High Speed Switching
• Wide SOA
Absolute Maximum Ratings
Symbol
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
I
Collector Current (Pulse)
CP
I
Base Current
B
P
Collector Dissipation (T
C
T
Junction Temperature
J
T
Storage Temperature
STG
Package Marking and Ordering Information
Part Number
Marking
KSC5026MOS*
C5026M-O
* The suffix "M" & "S" of FSID denotes TO126 package and the suffix "O" of FSID denotes h
© 2011 Fairchild Semiconductor Corporation
KSC5026M Rev. B3
T
= 25°C unless otherwise noted
A
Parameter
=25°C)
C
Package
Packing Method
TO-126
1
January 2011
TO-126
1
1. Emitter
2.Collector
3.Base
Value
Units
1100
V
800
V
7
V
1.5
A
5
A
0.8
A
20
W
°C
150
°C
- 55 to 150
Remarks
BULK
-class
FE
www.fairchildsemi.com

KSC5026MOS Summary of contents

  • Page 1

    ... Junction Temperature J T Storage Temperature STG Package Marking and Ordering Information Part Number Marking KSC5026MOS* C5026M-O * The suffix "M" & "S" of FSID denotes TO126 package and the suffix "O" of FSID denotes h © 2011 Fairchild Semiconductor Corporation KSC5026M Rev 25°C unless otherwise noted A Parameter =25° ...

  • Page 2

    ... Base-Emitter Saturation Voltage BE C Output Capacitance ob f Current Gain Bandwidth Product T t Turn On Time ON t Storage Time STG t Fall Time F h Classification FE Classification h FE1 © 2011 Fairchild Semiconductor Corporation KSC5026M Rev 25°C unless otherwise noted A Test Condition I = 1mA 5mA 1mA 0.75A ...

  • Page 3

    ... BE V (sat) 0.1 CE 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1 0.1 0.01 0 [A], COLLECTOR CURRENT C Figure 5. Switching Time © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 1000 100 I = 120mA 100mA 80mA 60mA 40mA 20mA 10mA ...

  • Page 4

    ... Typical Performance Characteristics 100 10 1 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 7. Reverse Bias Safe Operating Area © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 (Continued -0.15A 1000 10000 100 125 150 175 C], CASE TEMPERATURE C Figure 8. Power Derating www.fairchildsemi.com ...

  • Page 5

    ... Physical Dimension ±0.10 ø3.20 ±0.10 0.75 1.60 ±0.10 ±0.10 0.75 2.28TYP [2.28±0.20] © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 TO-126 ±0.30 8.00 #1 2.28TYP [2.28±0.20] 5 ±0.20 3.25 (1.00) (0.50) ±0.20 1.75 +0.10 0.50 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 6

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Global Power Resource AX-CAP * Green FPS Build it Now Green FPS CorePLUS ...