KSH112GTM_SB82051 Fairchild Semiconductor, KSH112GTM_SB82051 Datasheet - Page 2

• Manufacturer Part Number: KSH112GTM_SB82051
• Description: TRANS DARL NPN 100V 2A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of KSH112GTM_SB82051

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 20µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 2A, 3V
• Power - Max: 1.75W
• Frequency - Transition: 25MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10000
1000
100
1000
0.1
10
100
Figure 3. Collector Output Capacitance
10
10
1
0.01
0.01
1
0.1
Figure 1. DC current Gain
Figure 5. Turn Off Time
V
I
I
CB
C
C
[A], COLLECTOR CURRENT
[A], COLLECTOR CURRENT
[V], COLLECTOR-BASE VOLTAGE
0.1
0.1
1
t
STG
t
F
1
1
10
V
I
V
C
CC
=250I
CE
=30V
= 3V
B
10
10
100
Figure 2. Base-Emitter Saturation Voltage
0.01
0.01
0.1
0.1
0.1
10
10
10
1
1
1
0.01
Collector-Emitter Saturation Voltage
0.01
1
Figure 6. Safe Operating Area
V
CE
Figure 4. Turn On Time
[V], COLLECTOR-EMITTER VOLTAGE
I
I
C
C
[A], COLLECTOR CURRENT
[A], COLLECTOR CURRENT
10
0.1
0.1
V
V
BE
CE
(sat)
(sat)
100
1
1
I
C
V
I
C
= 250 I
CC
=250I
=30V
t
t
D
R
Rev. A4, October 2002
B
B
1000
10
10