KSH112GTM_SB82051 Fairchild Semiconductor, KSH112GTM_SB82051 Datasheet - Page 3

no-image

KSH112GTM_SB82051

Manufacturer Part Number
KSH112GTM_SB82051
Description
TRANS DARL NPN 100V 2A DPAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSH112GTM_SB82051

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (max)
20µA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75W
Frequency - Transition
25MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Typical Characteristics
25
20
15
10
5
0
0
25
Figure 7. Power Derating
T
50
C
[
o
C], CASE TEMPERATURE
75
100
125
(Continued)
150
175
Rev. A4, October 2002

Related parts for KSH112GTM_SB82051