PMBS3904,235 NXP Semiconductors, PMBS3904,235 Datasheet

TRANS NPN 40V 100MA SOT23

PMBS3904,235

Manufacturer Part Number
PMBS3904,235
Description
TRANS NPN 40V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBS3904,235

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
180 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933972890235
PMBS3904 /T3
PMBS3904 /T3
Product data sheet
Supersedes data of 1999 Apr 22
DATA SHEET
PMBS3904
NPN general purpose transistor
DISCRETE SEMICONDUCTORS
2004 Feb 02

Related parts for PMBS3904,235

PMBS3904,235 Summary of contents

Page 1

DATA SHEET PMBS3904 NPN general purpose transistor Product data sheet Supersedes data of 1999 Apr 22 DISCRETE SEMICONDUCTORS 2004 Feb 02 ...

Page 2

... NXP Semiconductors NPN general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification, e.g. telephony and professional communication equipment. DESCRIPTION NPN transistor in a plastic SOT23 package. PNP complement: PMBS3906. MARKING ...

Page 3

... NXP Semiconductors NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain ...

Page 4

... NXP Semiconductors NPN general purpose transistor 250 handbook, full pagewidth h FE 200 150 100 50 0 −2 − handbook, full pagewidth = 500 µ µ Ω 2.5 kΩ 3.9 kΩ Ω. Oscilloscope: input impedance Z i 2004 Feb 02 1 Fig.2 DC current gain; typical values. ...

Page 5

... NXP Semiconductors NPN general purpose transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Feb scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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