2PB709AQW,115 NXP Semiconductors, 2PB709AQW,115 Datasheet - Page 2

• Manufacturer Part Number: 2PB709AQW,115
• Description: TRANSISTOR PNP 45V 100MA SC59
• Manufacturer: NXP Semiconductors

Specifications of 2PB709AQW,115

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 2mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 60MHz
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2PB709AQW T/R; 2PB709AQW T/R; 934057078115

NXP Semiconductors
FEATURES
• High collector current (max. 100 mA)
• Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in an SC-70 (SOT323) plastic package.
NPN complement: 2PD601AW
MARKING
Note
1. * = p: made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
2002 Jun 26
2PB709AQW
2PB709ARW
2PB709ASW
V
V
V
I
I
P
T
T
T
C
CM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistor
* = t: made in Malaysia.
Handbook SC18”.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
N5*
N7*
N9*
(1)
open emitter
open base
open collector
T
amb
≤ 25 °C; note 1
2
PINNING
CONDITIONS
handbook, halfpage
Fig.1
PIN
1
2
3
Top view
Simplified outline SC-70 (SOT323)
and symbol.
base
emitter
collector
1
3
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
2
MAM048
−45
−45
−6
−100
−200
200
+150
150
+150
Product data sheet
2PB709AW
MAX.
1
3
2
V
V
V
mA
mA
mW
°C
°C
°C
UNIT