2PB709ARW,115 NXP Semiconductors, 2PB709ARW,115 Datasheet - Page 2

TRANSISTOR PNP 45V 100MA SC59

2PB709ARW,115

Manufacturer Part Number
2PB709ARW,115
Description
TRANSISTOR PNP 45V 100MA SC59
Manufacturer
NXP Semiconductors
Datasheets

Specifications of 2PB709ARW,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
500mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
210 @ 2mA, 10V
Power - Max
200mW
Frequency - Transition
70MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
210
Gain Bandwidth Product Ft
70 MHz
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 45 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 100 mA
Maximum Dc Collector Current
- 200 mA
Power Dissipation
250 mW
Maximum Operating Frequency
70 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2PB709ARW T/R
2PB709ARW T/R
934057079115
NXP Semiconductors
FEATURES
• High collector current (max. 100 mA)
• Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in an SC-70 (SOT323) plastic package.
NPN complement: 2PD601AW
MARKING
Note
1. * = p: made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
2002 Jun 26
2PB709AQW
2PB709ARW
2PB709ASW
V
V
V
I
I
P
T
T
T
C
CM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistor
* = t: made in Malaysia.
Handbook SC18”.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
N5*
N7*
N9*
(1)
open emitter
open base
open collector
T
amb
≤ 25 °C; note 1
2
PINNING
CONDITIONS
handbook, halfpage
Fig.1
PIN
1
2
3
Top view
Simplified outline SC-70 (SOT323)
and symbol.
base
emitter
collector
1
3
−65
−65
MIN.
DESCRIPTION
2
MAM048
−45
−45
−6
−100
−200
200
+150
150
+150
Product data sheet
2PB709AW
MAX.
1
3
2
V
V
V
mA
mA
mW
°C
°C
°C
UNIT

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