2SC1740STPS Rohm Semiconductor, 2SC1740STPS Datasheet
2SC1740STPS
Manufacturer Part Number
2SC1740STPS
Description
TRANSISTOR NPN 50V 0.15A SPT TB
Manufacturer
Rohm Semiconductor
Datasheet
1.2SC2412KT146R.pdf
(4 pages)
Specifications of 2SC1740STPS
Transistor Type
NPN
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
180MHz
Mounting Type
Through Hole
Package / Case
SC-72-3, SPT
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
7 V
Continuous Collector Current
0.15 A
Maximum Dc Collector Current
0.15 A
Power Dissipation
300 mW
Maximum Operating Frequency
180 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
270 at 1 mA at 6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC1740STPS
Manufacturer:
ROHM
Quantity:
55 000
General purpose transistor (50V, 0.15A)
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A /
Structure
Epitaxial planar type
NPN silicon transistor
Absolute maximum (Ta=25C)
Electrical characteristics (Ta=25C)
○
c
www.rohm.com
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Collector power
dissipation
Transition frequency
2SA1774H / 2SA2029 / 2SA933AS.
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
2009 ROHM Co., Ltd. All rights reserved.
Parameter
2SC2412K, 2SC4081
2SC4617, 2SC5658
2SC1740S
Parameter
Symbol
BV
BV
BV
V
Cob
I
I
h
CE(sat)
CBO
EBO
f
FE
T
CBO
CEO
EBO
Min.
120
60
50
7
−
−
−
−
−
Symbol
V
V
V
Tstg
Typ.
P
180
CBO
CEO
EBO
I
Tj
C
C
−
−
−
−
−
−
−
2
* Denotes h
Dimensions (Unit : mm)
2SC2412K
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Max.
390
0.1
0.1
0.4
3.5
−
−
−
−
0.3Min.
Abbreviated symbol: B*
ROHM : VMT3
FE
2SC5658
1/3
−55 to +150
MHz
Limits
Unit
Abbreviated symbol: B*
0.15
0.15
μA
μA
1.6
pF
2.8
150
0.2
0.3
V
V
V
V
−
60
50
7
0.2
(1) Emitter
(2) Base
(3) Collector
(3)
1.2
0.8
V
I
I
I
V
V
I
V
V
(2)
(1)
0.15Max.
C
C
E
C
EB
0.2
CB
CE
CE
CE
=50μA
=1mA
=50μA
/I
B
=7V
=60V
=6V, I
=12V, I
=12V, I
(1) Base
(2) Emitter
(3) Collector
=50mA/5mA
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SC4081
C
Each lead has same dimensions
=1mA
0.1Min.
E
E
Conditions
Unit
=−2mA, f=100MHz
=0A, f=1MHz
°C
°C
W
V
V
V
A
Abbreviated symbol: B*
1.25
2.1
(1) Emitter
(2) Base
(3) Collector
ROHM : SPT
EIAJ : SC-72
2SC1740S
5
(1) (2) (3)
4 ± 0.2
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SC4617
0.1Min.
2.5 +0.4
0.45
Abbreviated symbol: B*
− 0.1
+0.15
− 0.05
( 3 )
2009.12 - Rev.C
0.8
1.6
( 1 )
( 2 )
(1) Emitter
(2) Collector
(3) Base
0.5
2 ± 0.2
(1) Emitter
(2) Base
(3) Collector
0.45
+0.15
− 0.05
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2SC1740STPS Summary of contents
Page 1
General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. Structure Epitaxial planar type NPN silicon transistor ...
Page 2
FE Package Code Basic ordering h unit (pieces) Type FE 2SC2412K QR 2SC4081 QR 2SC4617 QR 2SC5658 QR 2SC1740S QR h values are classified as follows : ...
Page 3
0.2 Ta=100°C 0.1 25°C −55°C 0.05 0.02 0.01 0.2 0 100 200 (mA) COLLECTOR CURRENT : I C Fig.7 ...
Page 4
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...