BC857BT116 Rohm Semiconductor, BC857BT116 Datasheet
BC857BT116
Manufacturer Part Number
BC857BT116
Description
TRANSISTOR PNP 45V 1MA SST3 TR
Manufacturer
Rohm Semiconductor
Datasheet
1.BC857BT116.pdf
(2 pages)
Specifications of BC857BT116
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
210 @ 2mA, 5V
Power - Max
350mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Pnp
Transistor Polarity
Collector Emitter Voltage V(br)ceo
45V
Power Dissipation Pd
200mW
Dc Collector Current
10mA
Operating Temperature Range
-65°C To +150°C
Transistor Case Style
SOT-23
No. Of
RoHS Compliant
Transistor Polarity
PNP
Dc Current Gain Hfe
210
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Part Number
Manufacturer
Quantity
Price
Transistors
PNP small signal transistor
BC857B
1) Ideal for switching and AF amplifier applications.
2) High current gain.
∗
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Type
BC857B
Features
Packaging specifications
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
DC current transfer ratio
Collector outpu capacitance
Collector-base cutoff current
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Mounted on a 7
Parameter
Package
Code
Basic ordering unit (pieces)
Parameter
×
5
×
0.6 mm CERAMIC SUBSTRATE
Taping
T116
3000
Symbol
Symbol
V
V
BV
BV
BV
V
V
V
V
Tstg
CE(sat1)
CE(sat2)
Cob
I
I
BE(on)
CBO
P
CBO
CBO
CEO
I
Tj
h
EBO
f
C
T
CEO
CBO
EBO
C
FE
Min.
−0.6
−45
−50
210
−5
−65 to 150
−
−
−
−
−
−
Limits
−0.1
0.20
0.35
−50
−45
150
−5
Typ.
250
−
−
−
−
−
−
−
−
−
−
−0.015
Dimensions (Unit : mm)
−0.65
−0.75
Max.
(1)Emitter
(2)Base
(3)Collector
−0.3
480
BC857B
4.5
−4
−
−
−
−
Unit
°C
°C
W
W
V
V
V
A
MHz
Unit
µ A
pF
µ A
V
V
V
V
V
V
−
∗
Abbreviated symbol : G3F
I
I
I
V
I
I
V
V
V
V
V
C
C
E
C
C
= −50 µ A
CB
CE
CE
CE
CB
CB
= −1mA
= −50 µ A
/I
/I
0.95
B
B
( 2 )
( 3 )
= −30V
= −5V, I
= 5V, I
= −5V, I
= −10V, f=1MHz
= −30V
= −10mA/ −0.5mA
= −100mA/ −5mA
2.9
0.4
1.9
0.95
( 1 )
C
Conditions
= −2mA
Each lead has same dimensions
C
E
= 20mA, f=100MHz
= −10mA
0.15
0.95
0.45
BC857B
1/1
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BC857BT116 Summary of contents
Page 1
Transistors PNP small signal transistor BC857B Features 1) Ideal for switching and AF amplifier applications. 2) High current gain. Packaging specifications Package Taping Type Code T116 Basic ordering unit (pieces) 3000 BC857B Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter ...
Page 2
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...