PBSS2540M,315 NXP Semiconductors, PBSS2540M,315 Datasheet
PBSS2540M,315
Specifications of PBSS2540M,315
PBSS2540M T/R
PBSS2540M T/R
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PBSS2540M,315 Summary of contents
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DATA SHEET BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low V Product data sheet DISCRETE SEMICONDUCTORS M3D883 (BISS) transistor CEsat 2003 Jul 22 ...
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... NXP Semiconductors 40 V, 0.5 A NPN low V (BISS) transistor CEsat FEATURES • Low collector-emitter saturation voltage V • High collector current capability I • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management: – DC-DC converter – Supply line switching – ...
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... NXP Semiconductors 40 V, 0.5 A NPN low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...
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... NXP Semiconductors 40 V, 0.5 A NPN low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat R equivalent on-resistance CEsat V base-emitter saturation voltage BEsat V base-emitter turn-on voltage ...
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... NXP Semiconductors 40 V, 0.5 A NPN low V (BISS) transistor CEsat 1200 handbook, halfpage h FE 1000 (1) 800 600 (2) 400 (3) 200 0 − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values handbook, halfpage ...
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... NXP Semiconductors 40 V, 0.5 A NPN low V (BISS) transistor CEsat 1200 handbook, halfpage I C (mA) 1000 800 600 400 200 °C. T amb ( mA 22.5 mA. ( 12 mA 17.5 mA. ( 7.5 mA Fig.6 Collector current as a function of collector-emitter voltage; typical values. 2003 Jul 22 MHC083 handbook, halfpage (1) (2) ...
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... NXP Semiconductors 40 V, 0.5 A NPN low V (BISS) transistor CEsat PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...