TRANSISTOR PNP 30V 1MA SST3 TR

BC858BT116

Manufacturer Part NumberBC858BT116
DescriptionTRANSISTOR PNP 30V 1MA SST3 TR
ManufacturerRohm Semiconductor
BC858BT116 datasheet
 


Specifications of BC858BT116

Transistor TypePNPCurrent - Collector (ic) (max)100mA
Voltage - Collector Emitter Breakdown (max)30VVce Saturation (max) @ Ib, Ic650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce210 @ 2mA, 5VPower - Max350mW
Frequency - Transition250MHzMounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-  
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Transistors
PNP General Purpose Transistor
BC858BW / BC858B
Features
< -30V (I
1) BV
=-1mA)
CEO
C
2) Complements the BC848B / BC848BW.
Package, marking and packaging specifications
Paet No.
BC858BW
Pakaging type
UMT3
G3K
Marking
T106
Code
Basic ordering unit (pieces)
3000
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
V
CBO
Collector-emitter voltage
V
CEO
Emitter-base voltage
V
EBO
I
Collector current
C
Collector power dissipation
P
C
Junction temperature
Tj
−65 to +150
Storage temperature
Tstg
When mounted on 7 × 5 × 0.6 mm ceramic board.
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BV
CBO
Collector-emitter breakdown voltage
BV
CEO
Emitter-base breakdown voltage
BV
EBO
Collector cutoff current
I
CBO
Collector-emitter saturation voltage
V
CE(sat)
Base-emitter saturation voltage
V
BE(on)
DC current transfer ratio
h
FE
Transition frequency
f
T
Output capacitance
Cob
Electrical characteristics curves
0.7
100
Ta=25˚C
0.5
0.6
80
0.4
60
0.3
40
0.2
20
0.1
I
=0mA
B
0
0
1.0
2.0
COLLECTOR-EMITTER VOLTAGE : V
(V)
CE
Fig.1 Grounded emitter output
characteristics ( I )
External dimensions (Unit : mm)
BC858BW
BC858B
SST3
ROHM : UMT3
EIAJ : EC-70
G3K
T116
3000
BC858B
Limits
Unit
−30
V
−30
V
−5
V
−0.1
A
ROHM : SST3
0.2
W
0.35
150
˚C
˚C
Min.
Typ.
Max.
Unit
−30
= −50µA
V
I
C
−30
= −1mA
V
I
C
−5
= −50µA
V
I
E
= −30V
−100
nA
V
CB
µA
= −30V, Ta=150 °C
4
V
CB
−0.3
= −10mA/−0.5mA
V
I
/I
C
B
−0.65
= −100mA/−5mA
V
I
/I
C
B
−0.6
−0.75
= −5V/−10mA
V
V
/I
CE
C
= −5V/−2mA
210
480
V
/I
CE
C
= −5V , I
250
MHz
V
CE
E
= −10V , I
4.5
pF
V
CB
10.0
Ta=25˚C
50
45
8.0
40
35
6.0
30
25
4.0
20
15
10
2.0
5
1
=0µA
B
0
0
1.0
COLLECTOR-EMITTER VOLTAGE : V
CE
Fig.2 Grounded emitter output
characteristics ( II )
BC858BW / BC858B
2.0±0.2
1.3±0.1
0.9±0.1
0.65 0.65
0.2
0.7±0.1
(1)
(2)
00.1
(3)
+0.1
0.3
-
0
0.15±0.05
All terminals have same dimensions
2.9±0.2
+0.2
0.95
−0.1
1.9±0.2
0.45±0.1
0.95 0.95
(2)
(1)
~
0
0.1
0.2Min.
(3)
+0.1
0.15
−0.06
+0.1
0.4
−0.05
All terminals have same dimensions
Conditions
=20mA , f=100MHz
=0 , f=1MHz
E
2.0
(V)
Rev.A
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
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BC858BT116 Summary of contents

  • Page 1

    Transistors PNP General Purpose Transistor BC858BW / BC858B Features < -30V ( =-1mA) CEO C 2) Complements the BC848B / BC848BW. Package, marking and packaging specifications Paet No. BC858BW Pakaging type UMT3 G3K Marking T106 Code Basic ordering ...

  • Page 2

    Transistors 500 100 10 5 0.1 1.0 10 COLLECTOR CURRENT : I Fig.3 DC current gain vs. collector current ( I ) 500 Ta=125˚C Ta=25˚C 100 Ta=-55˚ 0.1 1.0 10 COLLECTOR CURRENT : I Fig.4 DC current gain ...

  • Page 3

    Transistors Ta=25˚ = 0.3 0.2 0.1 0 0.1 1.0 10 100 COLLECTOR CURRENT : I (mA) C Fig.6 Collector-emitter saturation voltage vs. collector current 1000 Ta=25˚ = 40V 15V 100 ...

  • Page 4

    Transistors 1000 Ta=25˚C V =5V CE 100 10 0 100 500 COLLECTOR CURRENT : I (mA) C Fig.15 Gain bandwidth product vs. collector current 100 1k ...

  • Page 5

    Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...