BC858BT116 Rohm Semiconductor, BC858BT116 Datasheet - Page 4

TRANSISTOR PNP 30V 1MA SST3 TR

BC858BT116

Manufacturer Part Number
BC858BT116
Description
TRANSISTOR PNP 30V 1MA SST3 TR
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of BC858BT116

Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
210 @ 2mA, 5V
Power - Max
350mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC858BT116
Quantity:
30 000
Transistors
100k
100
10k
1000
10
100
1k
9
8
7
6
5
4
3
2
1
0
0.01
10
Fig.15 Gain bandwidth product
10
0.5 1
Fig.20 Noise characteristics ( III )
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
vs. collector current
0.1
10
100
Fig.18 Noise vs. collector curren
1
100
C
FREQUENCY : f(Hz)
C
Ta=25˚C
V
f=30Hz
(mA)
(mA)
Ta=25˚C
V
CE
CE
=5V
=5V
10
1k
500
100k
100
10k
100
0.1
10
1k
0.01
1
0.1
Fig.21 Noise characteristics ( IV )
Ta=25˚C
V
f=1kHz
hoe
hre
CE
=5V
Fig.16 h parameter vs.
10k
t
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
hie
0.1
1
collector current
Ta=25˚C
V
I
R
C
CE
S
=100µA
=10kΩ
hfe
=5V
100k
hoe
10
1
I
hie=8.75kΩ
hfe=270
hre=6.25×10 -
hoe=17.7µS
C
=1mA
C
C
hre
Ta=25°C
V
f=270Hz
(mA)
(mA)
CE
=6V
5
10 0
10
100k
10k
100
1k
0.01
100p
100k
BC858BW / BC858B
0.1p
10n
10p
100
10k
Fig.19 Noise characteristics ( II )
1n
1p
Fig.17 Noise characteristics ( I )
1k
0.01
0
Fig. 22 Noise characteristics ( V )
Ta=25˚C
V
f=10kHz
COLLECTOR CURRENT : I
V
CE
CB
AMBIENT TEMPERATURE : Ta (°C)
=5V
= 30V
25
COLLECTOR CURRENT : I
0.1
50
0.1
Rev.A
75
1
100
1
C
Ta=25˚C
V
f=10Hz
(mA)
CE
C
125
=5V
(mA)
10
4/4
150
10

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