PBSS3515E,115 NXP Semiconductors, PBSS3515E,115 Datasheet

TRANS NPN 15V 0.5A SOT416

PBSS3515E,115

Manufacturer Part Number
PBSS3515E,115
Description
TRANS NPN 15V 0.5A SOT416
Manufacturer
NXP Semiconductors
Series
-r
Datasheets

Specifications of PBSS3515E,115

Package / Case
EMT3 (SOT-416, SC-75-3)
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
15V
Transistor Type
PNP
Frequency - Transition
280MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 100mA, 2V
Vce Saturation (max) @ Ib, Ic
250mV @ 50mA, 500mA
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
250 mW
Maximum Operating Frequency
280 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934059167115::PBSS3515E T/R::PBSS3515E T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS3515E,115
Manufacturer:
NXP Semiconductors
Quantity:
5 050
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS2515E.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS3515E
15 V, 0.5 A PNP low V
Rev. 02 — 27 April 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Portable applications
Pulse test: t
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
Breakthrough In Small Signal (BISS) transistor in an ultra small
300 s;
0.02.
FE
CEsat
) at high I
Conditions
open base
single pulse;
t
I
I
C
p
C
B
= 50 mA
= 500 mA;
and I
1 ms
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
300
Product data sheet
Max
500
15
0.5
1
Unit
V
A
A
m

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PBSS3515E,115 Summary of contents

Page 1

PBSS3515E 15 V, 0.5 A PNP low V Rev. 02 — 27 April 2009 1. Product profile 1.1 General description PNP low V SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515E. 1.2 Features I Low collector-emitter saturation voltage ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS3515E 4. Marking Table 4. Type number PBSS3515E 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...

Page 3

... NXP Semiconductors (1) FR4 PCB, mounting pad for collector 1 cm (2) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 3 10 duty cycle = 1 0.75 Z th(j-a) (K/W) 0.5 0.33 0 0.1 0.05 0. FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3 10 duty cycle = 1 Z th(j-a) 0.75 (K/W) 0.5 0. 0.2 0.1 ...

Page 5

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol I CBO I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS3515E_2 Product data sheet Characteristics Parameter Conditions collector-base cut-off current 150 C j emitter-base cut-off current DC current gain collector-emitter mA; C saturation voltage I = 0.5 mA ...

Page 6

... NXP Semiconductors 600 ( 400 (2) 200 ( ( 100 C amb ( amb ( amb Fig 4. DC current gain as a function of collector current; typical values 1100 V BE (mV) 900 (1) 700 (2) 500 (3) 300 100 ( amb ( amb ( 100 C amb Fig 6. Base-emitter voltage as a function of collector current; typical values PBSS3515E_2 Product data sheet ...

Page 7

... NXP Semiconductors 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) ( 100 C amb ( amb ( amb Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values PBSS3515E_2 Product data sheet 15 V, 0.5 A PNP low V ...

Page 8

... NXP Semiconductors 8. Test information Fig 12. BISS transistor switching time definition Fig 13. Test circuit for switching times PBSS3515E_2 Product data sheet (probe) oscilloscope 450 250 mA 12.5 mA Bon Rev. 02 — 27 April 2009 PBSS3515E 15 V, 0.5 A PNP low V CEsat input pulse (idealized waveform) I (100 %) ...

Page 9

... NXP Semiconductors 9. Package outline Fig 14. Package outline SOT416 (SC-75) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description PBSS3515E [1] For further information and the availability of packing methods, see 11. Soldering Fig 15. Reflow soldering footprint SOT416 (SC-75) ...

Page 10

... Document ID Release date PBSS3515E_2 20090427 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Figure • Table 6 “Thermal • ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision history ...

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