BF820,215 NXP Semiconductors, BF820,215 Datasheet

TRANS NPN 300V 50MA SOT23

BF820,215

Manufacturer Part Number
BF820,215
Description
TRANS NPN 300V 50MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF820,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
300V
Transistor Type
NPN
Frequency - Transition
60MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 25mA, 20V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 30mA
Dc Collector/base Gain Hfe Min
50
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
50 mA
Maximum Dc Collector Current
100 mA
Power Dissipation
250 mW
Maximum Operating Frequency
60 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933665120215::BF820 T/R::BF820 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF820,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1999 Apr 15
DATA SHEET
BF820; BF822
NPN high-voltage transistors
DISCRETE SEMICONDUCTORS
2004 Jan 16

Related parts for BF820,215

BF820,215 Summary of contents

Page 1

DATA SHEET BF820; BF822 NPN high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 DISCRETE SEMICONDUCTORS 2004 Jan 16 ...

Page 2

... NXP Semiconductors NPN high-voltage transistors FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BF821; BF823. MARKING TYPE NUMBER BF820 BF822 Note 1 ...

Page 3

... NXP Semiconductors NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BF820 BF822 V collector-emitter voltage CEO BF820 BF822 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors NPN high-voltage transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 5

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 6

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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