BF823,215 NXP Semiconductors, BF823,215 Datasheet

TRANS PNP 250V 50MA SOT23

BF823,215

Manufacturer Part Number
BF823,215
Description
TRANS PNP 250V 50MA SOT23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BF823,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
250V
Vce Saturation (max) @ Ib, Ic
800mV @ 5mA, 30mA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 25mA, 20V
Power - Max
250mW
Frequency - Transition
60MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
250 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.05 A
Power Dissipation
250 mW
Maximum Operating Frequency
60 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933640900215
BF823 T/R
BF823 T/R
Product data sheet
Supersedes data of 1999 Apr 15
DATA SHEET
BF821; BF823
PNP high-voltage transistors
DISCRETE SEMICONDUCTORS
2004 Jan 16

Related parts for BF823,215

BF823,215 Summary of contents

Page 1

DATA SHEET BF821; BF823 PNP high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 DISCRETE SEMICONDUCTORS 2004 Jan 16 ...

Page 2

... NXP Semiconductors PNP high-voltage transistors FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822. MARKING TYPE NUMBER BF821 BF823 Note Made in Hong Kong. ...

Page 3

... NXP Semiconductors PNP high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BF821 BF823 V collector-emitter voltage CEO BF821 BF823 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors PNP high-voltage transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 5

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 6

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

Related keywords