PBSS4240Y,115 NXP Semiconductors, PBSS4240Y,115 Datasheet

TRANS NPN 40V 3A SOT363

PBSS4240Y,115

Manufacturer Part Number
PBSS4240Y,115
Description
TRANS NPN 40V 3A SOT363
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS4240Y,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
320mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 1A, 2V
Power - Max
430mW
Frequency - Transition
230MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Quad Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
2 A
Power Dissipation
430 mW
Maximum Operating Frequency
230 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056511115
PBSS4240Y T/R
PBSS4240Y T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
MBD128
PBSS4240Y
40 V low V
NPN transistor
CEsat
Product data sheet
2001 Jul 13

Related parts for PBSS4240Y,115

PBSS4240Y,115 Summary of contents

Page 1

DATA SHEET fpage MBD128 PBSS4240Y 40 V low V Product data sheet DISCRETE SEMICONDUCTORS NPN transistor CEsat 2001 Jul 13 ...

Page 2

... NXP Semiconductors 40 V low V NPN transistor CEsat FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switching circuits • ...

Page 3

... NXP Semiconductors 40 V low V NPN transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors 40 V low V NPN transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage BEsat V base-emitter turn-on voltage ...

Page 5

... NXP Semiconductors 40 V low V NPN transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2001 Jul scale 2.2 1.35 2.2 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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