PBSS5240Y,115 NXP Semiconductors, PBSS5240Y,115 Datasheet

TRANS PNP 40V 3A SOT363

PBSS5240Y,115

Manufacturer Part Number
PBSS5240Y,115
Description
TRANS PNP 40V 3A SOT363
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS5240Y,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
350mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
210 @ 1A, 2V
Power - Max
430mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Quad Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
2 A
Power Dissipation
430 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056512115
PBSS5240Y T/R
PBSS5240Y T/R
Product data sheet
Supersedes data of 2001 Oct 24
DATA SHEET
fpage
PBSS5240Y
40 V low V
MBD128
DISCRETE SEMICONDUCTORS
CEsat
PNP transistor
2002 Feb 28

Related parts for PBSS5240Y,115

PBSS5240Y,115 Summary of contents

Page 1

DATA SHEET fpage MBD128 PBSS5240Y 40 V low V Product data sheet Supersedes data of 2001 Oct 24 DISCRETE SEMICONDUCTORS PNP transistor CEsat 2002 Feb 28 ...

Page 2

... NXP Semiconductors 40 V low V PNP transistor CEsat FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switching circuits • ...

Page 3

... NXP Semiconductors 40 V low V PNP transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors 40 V low V PNP transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current V CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage V base-emitter saturation BEsat voltage V base-emitter turn-on voltage V BEon C collector capacitance ...

Page 5

... NXP Semiconductors 40 V low V PNP transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2002 Feb scale 2.2 1.35 2.2 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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