2PB1424,115 NXP Semiconductors, 2PB1424,115 Datasheet

TRANSISTOR PNP 20V 3.0A SC-62

2PB1424,115

Manufacturer Part Number
2PB1424,115
Description
TRANSISTOR PNP 20V 3.0A SC-62
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of 2PB1424,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 100mA, 2V
Power - Max
2W
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
180
Gain Bandwidth Product Ft
125 MHz
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 20 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 3 A
Maximum Dc Collector Current
- 5 A
Power Dissipation
2 W
Maximum Operating Frequency
125 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934059291115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: 2PD2150.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
V
I
I
V
C
CM
CEO
CEsat
2PB1424
20 V, 3 A PNP low V
Rev. 02 — 15 January 2007
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Pulse test: t
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation voltage
CEsat
Quick reference data
p
Breakthrough In Small Signal (BISS) transistor in a medium power
300 s;
0.02.
CEsat
FE
) at high I
Conditions
open base
single pulse;
t
I
I
C
p
C
B
(BISS) transistor
= 0.1 A
= 2 A;
and I
1 ms
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
Product data sheet
0.2
Max
20
3
5
0.5
Unit
V
A
A
V

Related parts for 2PB1424,115

2PB1424,115 Summary of contents

Page 1

PNP low V Rev. 02 — 15 January 2007 1. Product profile 1.1 General description PNP low V SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: 2PD2150. 1.2 Features I Low collector-emitter ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number 2PB1424 4. Marking Table 4. Type number 2PB1424 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...

Page 3

... NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Symbol R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a ceramic PCB, Al 2PB1424_2 Product data sheet 2.4 (1) P tot (W) 1 ...

Page 4

... NXP Semiconductors 3 10 duty cycle = Z th(j-a) 1 (K/W) 0.75 2 0.5 10 0.33 0.2 0.1 0.05 10 0.02 0. FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 duty cycle = 1 Z th(j-a) 0.75 (K/W) 0.5 0.33 0 ...

Page 5

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter I CBO I EBO CEsat [1] Pulse test: t 2PB1424_2 Product data sheet Characteristics Conditions collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage transition frequency 100 MHz common-base input capacitance MHz ...

Page 6

... NXP Semiconductors (mA (1) ( 0.2 0.4 0 100 C amb ( amb ( amb Fig 4. Collector current as a function of base-emitter voltage; typical values 5 I (mA ( amb Fig 6. Collector current as a function of collector-emitter voltage; typical values 2PB1424_2 Product data sheet 006aaa946 I (A) (3) 1.0 1.2 1.4 V (V) BE Fig 5. Collector current as a function of ...

Page 7

... NXP Semiconductors 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 1 V CEsat (V) ( ( 100 C amb ( amb ( amb Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 2PB1424_2 Product data sheet 006aaa950 ...

Page 8

... NXP Semiconductors (pF MHz; I amb E Fig 12. Common-base input capacitance as a function of emitter-base voltage; typical values 2PB1424_2 Product data sheet 006aaa954 C (pF ( Fig 13. Common-base output capacitance as a Rev. 02 — 15 January 2007 PNP low V CEsat MHz amb E e function of collector-base voltage; typical values 2PB1424 ...

Page 9

... NXP Semiconductors 8. Package outline Fig 14. Package outline SOT89 (SC-62/TO-243) 9. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number 2PB1424 [1] For further information and the availability of packing methods, see 2PB1424_2 Product data sheet 4.6 4 ...

Page 10

... NXP Semiconductors 10. Soldering 0.85 4.60 Fig 15. Reflow soldering footprint SOT89 (SC-62/TO-243) Fig 16. Wave soldering footprint SOT89 (SC-62/TO-243) 2PB1424_2 Product data sheet 4.75 2.25 2.00 1.90 1.20 0.20 1.20 1.20 1. (3x) 3.70 3.95 SOT89 standard mounting conditions for reflow soldering 6.60 2 ...

Page 11

... NXP Semiconductors 11. Revision history Table 9. Revision history Document ID Release date 2PB1424_2 20070115 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 12

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 13

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Legal information ...

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