PBSS304NX,115 NXP Semiconductors, PBSS304NX,115 Datasheet

TRANS NPN 60V 4.7A SOT-89

PBSS304NX,115

Manufacturer Part Number
PBSS304NX,115
Description
TRANS NPN 60V 4.7A SOT-89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS304NX,115

Transistor Type
NPN
Current - Collector (ic) (max)
4.7A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
245mV @ 235mA, 4.7A
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2A, 2V
Power - Max
2.1W
Frequency - Transition
130MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934059011115
PBSS304NX T/R
PBSS304NX T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS304PX.
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS304NX
60 V, 4.7 A NPN low V
Rev. 02 — 20 November 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
Pulse test: t
Quick reference data
CEsat
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT89
FE
CEsat
) at high I
C
and I
Conditions
open base
single pulse;
t
I
I
p
C
B
(BISS) transistor
≤ 1 ms
= 200 mA
= 4 A;
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
37
Product data sheet
60
Max
4.7
9.4
53
Unit
V
A
A

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PBSS304NX,115 Summary of contents

Page 1

PBSS304NX 60 V, 4.7 A NPN low V Rev. 02 — 20 November 2009 1. Product profile 1.1 General description NPN low V (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX. 1.2 Features Low collector-emitter ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS304NX 4. Marking Table 4. Type number PBSS304NX [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS304NX_2 Product data sheet 60 V, 4.7 A NPN low V Pinning Description emitter collector base Ordering information ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0.75 ...

Page 5

... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 th(j-a) (K/W) ...

Page 6

... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol I CBO I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS304NX_2 Product data sheet Characteristics C unless otherwise specified. Parameter Conditions collector-base cut-off current 150 ° emitter-base cut-off current DC current gain collector-emitter saturation voltage 4 collector-emitter ...

Page 7

... NXP Semiconductors 1000 h FE 800 (1) 600 (2) 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) 0.4 (3) 0 − −55 °C (1) T amb = 25 °C ...

Page 8

... NXP Semiconductors 1 V CEsat (V) −1 10 (1) (2) (3) −2 10 −3 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 − 100 °C (1) T amb = 25 °C ...

Page 9

... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition V Fig 14. Test circuit for switching times PBSS304NX_2 Product data sheet 60 V, 4.7 A NPN low (probe) oscilloscope 450 Ω − Bon Boff Rev. 02 — 20 November 2009 PBSS304NX (BISS) transistor CEsat input pulse ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS304NX [1] For further information and the availability of packing methods, see PBSS304NX_2 Product data sheet 60 V, 4.7 A NPN low V 4 ...

Page 11

... NXP Semiconductors 11. Soldering 0.85 1.20 4.60 1.20 SOT89 standard mounting conditions for reflow soldering Fig 16. Reflow soldering footprint Not recommended for wave soldering Fig 17. Wave soldering footprint PBSS304NX_2 Product data sheet 4.75 2.25 2.00 1.90 1.20 0.20 1. (3x) 3.70 3.95 6.60 2 ...

Page 12

... NXP Semiconductors 12. Mounting 40 mm 3.96 mm PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm Fig 18. FR4 PCB, standard footprint; ceramic PCB, Al footprint PBSS304NX_2 Product data sheet 60 V, 4.7 A NPN low 1.6 mm 001aaa234 O , standard 2 3 Rev. 02 — 20 November 2009 PBSS304NX (BISS) transistor ...

Page 13

... Revision history Document ID Release date PBSS304NX_2 20091120 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 15 “Package outline SOT89 • Figure 16 “Reflow soldering • ...

Page 14

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 15

... NXP Semiconductors 16. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...

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