PBSS306NX,115 NXP Semiconductors, PBSS306NX,115 Datasheet
PBSS306NX,115
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PBSS306NX T/R
PBSS306NX T/R
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PBSS306NX,115 Summary of contents
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PBSS306NX 100 V, 4.5 A NPN low V Rev. 02 — 8 December 2009 1. Product profile 1.1 General description NPN low V (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PX. 1.2 Features Low collector-emitter ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS306NX 4. Marking Table 4. Type number PBSS306NX [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS306NX_2 Product data sheet 100 V, 4.5 A NPN low V Pinning Description emitter collector base Ordering information ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0.75 ...
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... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 th(j-a) (K/W) ...
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... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol I CBO I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS306NX_2 Product data sheet 100 V, 4.5 A NPN low V Characteristics C unless otherwise specified. Parameter Conditions collector-base cut-off current 150 ° emitter-base cut-off current DC current gain collector-emitter I = 0.5 A ...
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... NXP Semiconductors 600 h FE (1) 400 (2) (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) 0.4 (3) 0 − −55 °C (1) T amb = 25 °C (2) T amb = 100 ° ...
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... NXP Semiconductors 1 V CEsat (V) −1 10 (1) (2) (3) −2 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 − 100 °C (1) T amb = 25 °C (2) T amb = − ...
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... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition V Fig 14. Test circuit for switching times PBSS306NX_2 Product data sheet 100 V, 4.5 A NPN low (probe) oscilloscope 450 Ω − Bon Boff Rev. 02 — 8 December 2009 PBSS306NX (BISS) transistor CEsat input pulse ...
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... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS306NX [1] For further information and the availability of packing methods, see PBSS306NX_2 Product data sheet 100 V, 4.5 A NPN low V 4 ...
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... NXP Semiconductors 11. Soldering 0.85 1.20 4.60 1.20 SOT89 standard mounting conditions for reflow soldering Fig 16. Reflow soldering footprint Not recommended for wave soldering Fig 17. Wave soldering footprint PBSS306NX_2 Product data sheet 100 V, 4.5 A NPN low V 4.75 2.25 2.00 1.90 1.20 0.20 1 ...
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... NXP Semiconductors 12. Mounting 40 mm 3.96 mm PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm Fig 18. FR4 PCB, standard footprint; ceramic PCB, Al footprint PBSS306NX_2 Product data sheet 100 V, 4.5 A NPN low 1.6 mm 001aaa234 O , standard 2 3 Rev. 02 — 8 December 2009 PBSS306NX (BISS) transistor ...
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... Revision history Document ID Release date PBSS306NX_2 20091208 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 15 “Package outline SOT89 • Figure 16 “Reflow soldering • ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 16. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...