PBSS306NZ,135 NXP Semiconductors, PBSS306NZ,135 Datasheet

TRANS NPN 100v 5.1A SOT-223

PBSS306NZ,135

Manufacturer Part Number
PBSS306NZ,135
Description
TRANS NPN 100v 5.1A SOT-223
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS306NZ,135

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Current - Collector (ic) (max)
5.1A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
300mV @ 255mA, 5.1A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 2V
Power - Max
2W
Frequency - Transition
110MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
5.1 A
Power Dissipation
2000 mW
Maximum Operating Frequency
110 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934059047135
PBSS306NZ /T3
PBSS306NZ /T3
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS306PZ.
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS306NZ
100 V, 5.1 A NPN low V
Rev. 02 — 11 December 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
Pulse test: t
Quick reference data
CEsat
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
FE
) at high I
CEsat
C
and I
Conditions
open base
single pulse;
t
I
I
p
C
B
≤ 1 ms
= 4 A;
= 200 mA
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
43
Product data sheet
Max
100
5.1
10.2
60
Unit
V
A
A

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PBSS306NZ,135 Summary of contents

Page 1

PBSS306NZ 100 V, 5.1 A NPN low V Rev. 02 — 11 December 2009 1. Product profile 1.1 General description NPN low V small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ. 1.2 Features Low collector-emitter saturation voltage V High ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS306NZ 4. Marking Table 4. Type number PBSS306NZ PBSS306NZ_2 Product data sheet Pinning Description base collector emitter collector Ordering information Package Name Description SC-73 plastic surface-mounted package with increased heatsink; 4 leads Marking codes Rev. 02 — ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0.75 ...

Page 5

... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 Z th(j-a) (K/W) ...

Page 6

... NXP Semiconductors 7. Characteristics Table amb Symbol I CBO I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS306NZ_2 Product data sheet Characteristics ° C unless otherwise specified. Parameter Conditions collector-base cut-off current 150 ° emitter-base cut-off current DC current gain collector-emitter saturation voltage 5 collector-emitter ...

Page 7

... NXP Semiconductors 600 h FE (1) 400 (2) (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) 0.4 (3) 0 − −55 °C (1) T amb = 25 °C (2) T amb = 100 ° ...

Page 8

... NXP Semiconductors 1 V CEsat (V) −1 10 −2 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C ...

Page 9

... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times PBSS306NZ_2 Product data sheet (probe) oscilloscope 450 Ω 12 0. Bon Rev. 02 — 11 December 2009 PBSS306NZ 100 V, 5.1 A NPN low V CEsat I (100 %) Bon I Boff off (probe) ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS306NZ [1] For further information and the availability of packing methods, see PBSS306NZ_2 Product data sheet 6.7 6 ...

Page 11

... NXP Semiconductors 11. Soldering 1.3 (4×) (4×) Fig 16. Reflow soldering footprint 1.9 Fig 17. Wave soldering footprint PBSS306NZ_2 Product data sheet 7 3.85 3.6 3.5 0.3 1 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 8.9 6 2.7 2.7 1.9 1.1 (2×) Rev. 02 — 11 December 2009 PBSS306NZ 100 V, 5 ...

Page 12

... Revision history Document ID Release date PBSS306NZ_2 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 16 “Reflow soldering • Figure 17 “Wave soldering ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...

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