PBSS5612PA,115 NXP Semiconductors, PBSS5612PA,115 Datasheet
PBSS5612PA,115
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PBSS5612PA,115 Summary of contents
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PBSS5612PA PNP low V Rev. 01 — 7 May 2010 1. Product profile 1.1 General description PNP low V thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4612PA. 1.2 ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number Package PBSS5612PA 4. Marking Table 4. Type number PBSS5612PA 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot PBSS5612PA Product data sheet Pinning ...
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... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...
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... NXP Semiconductors th(j-a) duty cycle = 1 (K/W) 0.75 0 0.33 0.2 0.1 0.05 10 0.02 0. −1 10 −5 − FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 0 ...
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... NXP Semiconductors th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 duty cycle = 1 Z 0.75 ...
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... NXP Semiconductors 7. Characteristics Table amb Symbol I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS5612PA Product data sheet Characteristics ° C unless otherwise specified. Parameter Conditions collector-base V CB cut-off current 150 ° collector-emitter V CE cut-off current emitter-base V EB cut-off current ...
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... NXP Semiconductors 600 ( 400 (2) 200 (3) 0 −1 −10 −1 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 6. DC current gain as a function of collector current; typical values −1 (V) −0.8 (1) (2) (3) −0.4 −0.0 −1 −10 −1 −10 = − ...
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... NXP Semiconductors −1 V CEsat (V) −1 −10 (2) −2 −10 (1) (3) −3 −10 −1 −10 −1 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω (1) (2) 1 (3) −1 10 − ...
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... NXP Semiconductors 8. Test information − − Fig 14. BISS transistor switching time definition Fig 15. Test circuit for switching times PBSS5612PA Product data sheet (probe) oscilloscope 450 Ω − − −0 Bon All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 ...
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... NXP Semiconductors 9. Package outline Fig 16. Package outline SOT1061 (HUSON3) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS5612PA [1] For further information and the availability of packing methods, see PBSS5612PA Product data sheet 1 ...
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... NXP Semiconductors 11. Soldering Fig 17. Reflow soldering footprint SOT1061 (HUSON3) PBSS5612PA Product data sheet 1.05 0.6 0.55 2.3 solder paste = solder lands solder resist Reflow soldering is the only recommended soldering method. All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 ...
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... NXP Semiconductors 12. Revision history Table 9. Revision history Document ID Release date PBSS5612PA v.1 20100507 PBSS5612PA Product data sheet PNP low V Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 PBSS5612PA (BISS) transistor CEsat ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...