TRANSISTOR NPN 160V 1.5A SOT-428

 

2SD1918TLQ

Manufacturer Part Number2SD1918TLQ
DescriptionTRANSISTOR NPN 160V 1.5A SOT-428
ManufacturerRohm Semiconductor
2SD1918TLQ datasheets

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Specifications of 2SD1918TLQ

Transistor TypeNPNCurrent - Collector (ic) (max)1.5A
Voltage - Collector Emitter Breakdown (max)160VVce Saturation (max) @ Ib, Ic2V @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce120 @ 100mA, 5VPower - Max10W
Frequency - Transition80MHzMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Bce NpnTransistor Polarity
Collector Emitter Voltage V(br)ceo160VPower Dissipation Pd1W
Dc Collector Current1AOperating Temperature Range-55°C To +150°C
Transistor Case StyleSOT-428No. Of Pins3
Transistor PolarityNPNDc Current Gain Hfe120
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other names2SD1918TLQ
2SD1918TLQTR
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Power Transistor (160V , 1.5A)
2SD1918 / 2SD1857A
Features
1) High breakdown voltage.(BV
160V)
CEO=
2) Low collector output capacitance.
(Typ. 20pF at V
10V)
CB=
3) High transition frequency.(f
80MH
T=
4) Complements the 2SB1275.
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Collector-base voltage
V
160
CBO
Collector-emitter voltage
V
160
CEO
Emitter-base voltage
V
5
EBO
1.5
Collector current
I
C
3
2SD1857A
1
Collector
power
P
1
C
2SD1918
dissipation
10
Junction temperature
150
Tj
−55 ∼+150
Storage temperature
Tstg
∗
1 Pw=200msec duty=1/2
∗
2
Printed circuit board 1.7mm thick, collector plating 1cm
or larger
2
.
Packaging specifications and h
FE
Type
2SD1918
2SD1857A
Package
CPT3
ATV
h
QR
PQ
FE
−
−
Marking
Code
TL
TV2
Basic ordering unit (pieces)
2500
2500
Denotes h
*
FE
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Collector-base breakdown voltage
BV
CBO
BV
Collector-emitter breakdown voltage
CEO
BV
Emitter-base breakdown voltage
EBO
Collector cutoff current
I
CBO
I
Emitter cutoff current
EBO
V
Collector-emitter saturation voltage
CE(sat)
V
Base-emitter saturation voltage
BE(sat)
2SD1918
DC current
h
FE
transfer ratio
2SD1857A
f
Transition frequency
T
Output capacitance
Cob
∗
Measured using pulse current.
www.rohm.com
○
2010 ROHM Co., Ltd. All rights reserved.
c
Dimensions (Unit : mm)
2SD1918
)
Z
Unit
V
ROHM : CPT3
V
EIAJ : SC-63
V
A(DC)
∗1
A(Pulse)
∗2
W
W
2SD1857A
W(Tc=25°C)
°C
°C
ROHM : ATV
Min.
Typ.
Max.
Unit
−
−
= 50μA
160
V
I
C
−
−
= 1mA
160
V
I
C
−
−
= 50μA
5
V
I
E
−
−
μA
= 120V
1
V
CB
−
−
μA
= 4V
1
V
EB
−
−
= 1A/0.1A
2
V
I
/I
C
B
−
−
= 1A/0.1A
1.5
V
I
/I
C
B
−
−
120
390
= 5V/0.1A
V
/I
CE
C
−
−
82
270
−
−
= 5V , I
= − 0.1A , f = 30MHz
80
MHz
V
CE
E
−
−
= 10V , I
= 0A , f = 1MHz
20
pF
V
CB
E
1/2
5.5
1.5
0.9
C0.5
0.8Min.
1.5
2.5
9.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
6.8
2.5
0.65Max.
0.5
( 1 )
( 2 )
( 3 )
2.54
2.54
1.05
0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Conditions
∗
∗
2010.09 - Rev.C

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2SD1918TLQ Summary of contents

  • Page 1

    Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BV 160V) CEO= 2) Low collector output capacitance. (Typ. 20pF at V 10V) CB= 3) High transition frequency.(f 80MH T= 4) Complements the 2SB1275. Absolute maximum ratings (Ta ...

  • Page 2

    Ta=25°C 0.8 0.6 0.4 0 (V) COLLECTOR TO EMITTER VOLTAGE : V CE Fig.1 Ground emitter output characteristics 1000 = 500 Ta=100°C 200 100 ...

  • Page 3

    No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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