BUL3N7 STMicroelectronics, BUL3N7 Datasheet

TRANSISTOR FAST NPN MV TO-220

BUL3N7

Manufacturer Part Number
BUL3N7
Description
TRANSISTOR FAST NPN MV TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL3N7

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
500mV @ 200mA, 1A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
18 @ 700mA, 5V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-

Available stocks

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Manufacturer
Quantity
Price
Part Number:
BUL3N7
Manufacturer:
ST
Quantity:
100
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Manufacturer:
ST
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Features
Applications
Description
The BUL3N7 is manufactured using high voltage
Multi-Epitaxial
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
H.F. ballast voltage FED where it is coupled with
the BUL3P5, its complementary PNP transistor.
Order Codes
December 2005
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
Part Number
BUL3N7
Planar
technology
Marking
BUL3N7
for
MEDIUM VOLTAGE FAST-SWITCHING
high
Internal Schematic Diagram
NPN POWER TRANSISTOR
Package
TO-220
TO-220
1
2
BUL3N7
Packing
3
TUBE
www.st.com
1/10
rev.1
10

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BUL3N7 Summary of contents

Page 1

... VERY HIGH SWITCHING SPEED ■ Applications ELECTRONIC BALLASTS FOR ■ FLUORESCENT LIGHTING Description The BUL3N7 is manufactured using high voltage Multi-Epitaxial Planar technology switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ...

Page 2

... Table 2. Thermal Data Symbol R Thermal Resistance Junction-Case_______________Max thJ-case R Thermal Resistance Junction-Ambient thJ-amb 2/10 Parameter = < 100ms, T < 150° < 5ms) P < 5ms 25°C c Parameter ______ ______Max BUL3N7 Value Unit 700 V 400 (BR)EBO 1 -65 to 150 °C 150 °C Value Unit 2.08 °C/W 62.5 ...

Page 3

... BUL3N7 2 Electrical Characteristics Electrical Characteristics (T Table 3. Symbol Parameter Collector Cut-off Current I CES ( Emitter-Base Breakdown Voltage (BR)EBO ( Collector-Emitter CEO(sus) Sustaining Voltage (I Note: 1 Collector-Emitter Saturation V CE(sat) Voltage Note Base-Emitter Saturation Voltage BE(sat) Note Current Gain FE RESISTIVE LOAD t Rise Time r t Storage Time s Fall Time ...

Page 4

... Electrical Characteristics 2.1 Typical Characteristics Figure 1. Safe Operating Area Figure 3. DC Current Gain Figure 5. Base Emitter Saturation Voltage 4/10 Figure 2. DC Current Gain Figure 4. Collector Emitter Saturation Voltage Figure 6. Switching Times Resistive Load BUL3N7 ...

Page 5

... BUL3N7 Figure 7. Switching Times Inductive Load 2 Electrical Characteristics Figure 8. Reverse Bised SOA 5/10 ...

Page 6

... Test Circuits 3 Test Circuits Figure 9. Inductive Load Switching Test Circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 3) Fast Recovery Rectifier Figure 10. Resistive Load Switching Test Circuits 1) Fast Electronic Switching 2) Non-inductive Resisitor 6/10 BUL3N7 ...

Page 7

... BUL3N7 4 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 8

... BUL3N7 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 ...

Page 9

... BUL3N7 5 Revision History Date Revision 09-Dec-2005 1 Initial Relase 5 Revision History Changes 9/10 ...

Page 10

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com BUL3N7 ...

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