BUL128 STMicroelectronics, BUL128 Datasheet

TRANSISTOR POWER NPN TO-220

BUL128

Manufacturer Part Number
BUL128
Description
TRANSISTOR POWER NPN TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL128

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
500mV @ 1A, 4A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
14 @ 2A, 5V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
4 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
14
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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APPLICATIONS:
DESCRIPTION
The device is manufactured using high voltage
Multi
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
November 2001
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
V
V
V
T
P
I
I
CEO
CES
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Epitaxial Planar
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
technology for high
Parameter
p
c
< 5 ms)
= 25
C
p
= 0)
< 5 ms)
B
BE
o
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
700
400
150
70
TO-220
9
4
8
2
4
1
BUL128
2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/7

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BUL128 Summary of contents

Page 1

... Base Current B I Base Peak Current ( Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j November 2001 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTERNAL SCHEMATIC DIAGRAM = < 5 ms) p < BUL128 TO-220 Value Unit 700 V 400 -65 to 150 C o 150 C 1/7 ...

Page 2

... BUL128 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter-Base Voltage EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector Cut-Off CEO Current ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... Safe Operating Areas DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage BUL128 3/7 ...

Page 4

... BUL128 Inductive Load Fall Time Resistive Load Fall Time Reverse Biased SOA 4/7 Inductive Load Storage Time Resistive Load Storage Time ...

Page 5

... Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor BUL128 5/7 ...

Page 6

... BUL128 DIM. MIN. A 4.40 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.40 H2 10. 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M DIA. 3.75 6/7 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 16.40 14.00 2.95 15.75 6.60 3 ...

Page 7

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