2N2907AUB TT Electronics/Optek Technology, 2N2907AUB Datasheet

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2N2907AUB

Manufacturer Part Number
2N2907AUB
Description
TRANSISTOR PNP GP HERMETIC SMD
Manufacturer
TT Electronics/Optek Technology
Datasheet

Specifications of 2N2907AUB

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
3-LCC
Lead Free Status / RoHS Status
Lead free / Not applicable
Frequency - Transition
-

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N2907AUB
Manufacturer:
MS
Quantity:
5
Part Number:
2N2907AUB
Manufacturer:
MICROSEMI/美高森美
Quantity:
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Part Number:
2N2907AUBJANTX
Manufacturer:
Microsemi
Quantity:
1 400
Prod uct Bul le tin JANTX, JANTXV, 2N2907AUB
Sep tem ber 1996
Surface Mount PNP General Purpose Transistor
Type JANTX, JANTXV, 2N2907AUB
Optek Technology, Inc.
Fea tures
De scrip tion
The JANTX/TXV2N2907AUB is a
miniature, hermetically sealed, ceramic
surface mount general purpose switching
transistor. The miniature three pin
ceramic package is ideal for upgrading
commercial grade circuits to military
reliability levels where plastic SOT-23
devices have been used. The “ UB” suffix
denotes the 3 terminal chip carrier
package, type “ B” per MIL-PRF-
19500/291.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is V
mW, T
MIL-PRF-19500/291 for complete
requirements. In addition, the TX and
TXV versions receive 100% thermal
response testing.
When ordering parts without processing,
do not use a JAN prefix.
Ceramic surface mount package
Miniature package to minimize circuit
board area
Hermetically sealed
Footprint and pin-out matches SOT-23
packaged transistors
Qualification per MIL-PRF-19500/291
A
= 25
o
C, t = 80 hrs. Refer to
CB
= 30 V, P
1215 W. Crosby Road
D
= 200
Ab so lute Maxi mum Rat ings (T
Collector- Base Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Emitter- Base Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Col lec tor Current- Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA
Op er at ing Junc tion Tem pera ture (T
Stor age Junc tion Tem pera ture (T
Power Dis si pa tion @ T
Power Dis si pa tion @ T
Sol der ing Tem pera ture (va por phase re flow for 30 sec.) . . . . . . . . . . . . . . . . . 215
Sol der ing Tem pera ture (heated collet for 5 sec.) . . . . . . . . . . . . . . . . . . . . . . . 260
Notes:
(1) Der ate line arly 6.6 mW/
Carrollton, Texas 75006
15-10
A
C
o
= 25
= 25
C above 25
o
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 W
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.16 W
stg
J
) . . . . . . . . . . . . . . . . . . . . . . . . -65
o
A
). . . . . . . . . . . . . . . . . . . . . . . . -65
C.
= 25
(972)323-2200
o
C un less oth er wise noted)
Fax (972)323-2396
o
o
C to +200
C to +200
o
o
o
o
(1)
C
C
C
C

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2N2907AUB Summary of contents

Page 1

... Prod uct Bul le tin JANTX, JANTXV, 2N2907AUB Sep tem ber 1996 Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUB Fea tures Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Footprint and pin-out matches SOT-23 packaged transistors ...

Page 2

... Types JANTX, JANTXV-2N2907AUB Elec tri cal Char ac ter is tics ( SYM BOL PA RAME TER Off Char ac ter is tics V Collector-Base Breakdown Voltage (BR)CBO V Collector-Emitter Breakdown Voltage (BR)CEO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Base Cutoff Current CBO I Collector-Emitter Cutoff Current CES I Emitter-Base Cutoff Current EBO ...

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