2N2222AUB TT Electronics/Optek Technology, 2N2222AUB Datasheet
2N2222AUB
Manufacturer Part Number
2N2222AUB
Description
TRANSISTOR NPN GP HERMETIC SMD
Manufacturer
TT Electronics/Optek Technology
Datasheet
1.2N2222AUB.pdf
(2 pages)
Specifications of 2N2222AUB
Transistor Type
NPN
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
1V @ 15mA, 500mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 1mA, 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
3-LCC
Lead Free Status / RoHS Status
Lead free / Not applicable
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N2222AUBJANTX
Manufacturer:
Microsemi
Quantity:
1 400
Company:
Part Number:
2N2222AUBJANTXV
Manufacturer:
Microsemi
Quantity:
1 400
Prod uct Bul le tin JANTX, JANTXV, 2N2222AUB
Sep tem ber 1996
Surface Mount NPN General Purpose Transistor
Type JANTX, JANTXV, 2N2222AUB
Op tek Tech nol ogy, Inc.
Fea ture
De scrip tion
The JANTX/TXV2N2222AUB is a
miniature hermetically sealed ceramic
surface mount general purpose switching
transistor. The miniature three pin
ceramic package is ideal for upgrading
commercial grade circuits to military
reliability levels where plastic SOT-23
devices have been used. The “ UB” suffix
denotes the 3 terminal chip carrier
package, type “ B” per MIL-PRF-
19500/255.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is V
mW, T
PRF-19500/255 for complete
requirements. In addition, the TX and
TXV versions are 100% thermal
response tested.
When ordering parts without processing,
do not use a JAN prefix.
Ceramic surface mount package
Miniature package to minimize circuit
board area
Hermetically sealed
Qualification per MIL-S-19500/255
Same footprint and pin-out as many
SOT-23 package transistors
A
= 25
o
C, t =80 hrs. Refer to MIL-
CB
= 30 V, P
1215 W. Crosby Road
D
= 200
Ab so lute Maxi mum Rat ings (T
Collector- Base Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter- Base Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0
Col lec tor Current- Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA
Op er at ing Junc tion Tem pera ture (T
Stor age Junc tion Tem pera ture (T
Power Dis si pa tion @ T
Power Dis si pa tion @ T
Sol der ing Tem pera ture (va por phase re flow for 30 sec.) . . . . . . . . . . . . . . . . . 215
Sol der ing Tem pera ture (heated collet for 5 sec.) . . . . . . . . . . . . . . . . . . . . . .
Notes:
(1) Der ate line arly 6.6 mW/
Car roll ton, Texas 75006
15-6
A
C
o
= 25
= 25
C above 25
o
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 W
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.16 W
stg
J
o
) . . . . . . . . . . . . . . . . . . . . . . . . -65
A
). . . . . . . . . . . . . . . . . . . . . . . . -65
C.
= 25
(972) 323- 2200
o
C un less oth er wise noted)
Fax (972) 323- 2396
o
o
C to +200
C to +200
260
o
o
o
o
(1)
C
C
C
C
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2N2222AUB Summary of contents
Page 1
... Prod uct Bul le tin JANTX, JANTXV, 2N2222AUB Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Fea ture Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Qualification per MIL-S-19500/255 Same footprint and pin-out as many ...
Page 2
... Types JANTX, JANTXV-2N2222AUB Elec tri cal Char ac ter is tics ( SYM BOL PA RAME TER Off Char ac ter is tics V Collector-Base Breakdown Voltage (BR)CBO V Collector-Emitter Breakdown Voltage (BR)CEO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Base Cutoff Current CBO I Emitter-Base Cutoff Current EBO I Collector-Emitter Cutoff Current CES ...