TRANS PNP GP 100MA 45V SOT-323

MSB1218A-RT1G

Manufacturer Part NumberMSB1218A-RT1G
DescriptionTRANS PNP GP 100MA 45V SOT-323
ManufacturerON Semiconductor
MSB1218A-RT1G datasheet
 


Specifications of MSB1218A-RT1G

Transistor TypePNPCurrent - Collector (ic) (max)100mA
Voltage - Collector Emitter Breakdown (max)45VVce Saturation (max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (max)100µADc Current Gain (hfe) (min) @ Ic, Vce210 @ 2mA, 10V
Power - Max150mWMounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Frequency - Transition-  
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MSB1218A- - RT1G
PNP Silicon General
Purpose Amplifier
Transistor
This PNP Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC- -70/SOT- -323 package which is designed for low power surface
mount applications.
Features
High h
, 210 - - 460
FE
Low V
, < 0.5 V
CE(sat)
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
= 25C)
A
Rating
Collector--Base Voltage
Collector--Emitter Voltage
Emitter--Base Voltage
Collector Current -- Continuous
Collector Current -- Peak
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Characteristic
Collector--Emitter Breakdown Voltage
(I
= 2.0 mAdc, I
= 0)
C
B
Collector--Base Breakdown Voltage
(I
= 10 mAdc, I
= 0)
C
E
Emitter--Base Breakdown Voltage
(I
= 10 mAdc, I
= 0)
E
E
Collector--Base Cutoff Current
(V
= 20 Vdc, I
= 0)
CB
E
Collector--Emitter Cutoff Current
(V
= 10 Vdc, I
= 0)
CE
B
DC Current Gain (Note 2)
(V
= 10 Vdc, I
= 2.0 mAdc)
CE
C
Collector--Emitter Saturation Voltage
(Note 2) (I
= 100 mAdc, I
= 10 mAdc)
C
B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. Pulse Test: Pulse Width  300 ms, D.C.  2%.
 Semiconductor Components Industries, LLC, 2010
October, 2010 - - Rev. 7
Symbol
Value
Unit
V
45
Vdc
(BR)CBO
V
45
Vdc
(BR)CEO
V
7.0
Vdc
(BR)EBO
I
100
mAdc
C
I
200
mAdc
C(P)
Symbol
Max
Unit
P
150
mW
D
T
150
C
J
T
-- 55 to +150
C
stg
Symbol
Min
Max
Unit
V
45
--
Vdc
(BR)CEO
V
45
--
Vdc
(BR)CBO
V
7.0
--
Vdc
(BR)EBO
I
--
0.1
mA
CBO
I
--
100
mA
CEO
h
210
340
--
FE1
MSB1218A--RT1G
V
--
0.5
Vdc
CE(sat)
†For information on tape and reel specifications,
1
http://onsemi.com
COLLECTOR
3
1
2
BASE
EMITTER
3
1
2
SC- -70 (SOT- -323)
CASE 419
STYLE 4
MARKING DIAGRAM
BR M G
G
1
BR
= Device Code
M
= Date Code*
= Pb--Free Package
G
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
SC--70
3000 /Tape & Reel
(Pb--Free)
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MSB1218A- -RT1/D

MSB1218A-RT1G Summary of contents

  • Page 1

    ... MSB1218A- - RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC- -70/SOT- -323 package which is designed for low power surface mount applications. Features  High h , 210 - - 460 FE  ...

  • Page 2

    R = 833C/W θ AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve 1000 T = 25 75 25C A 100 10 ...

  • Page 3

    V (V) CB Figure 7. Capacitance http://onsemi.com ...

  • Page 4

    ... H 2.00 2.10 2.40 0.079 0.083 E PIN 1. CATHODE 2. CATHODE 3. ANODE   mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MSB1218A- -RT1/D MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 ...