BC846BWT1G ON Semiconductor, BC846BWT1G Datasheet

TRANSISTOR NPN 65V 100MA SOT-363

BC846BWT1G

Manufacturer Part Number
BC846BWT1G
Description
TRANSISTOR NPN 65V 100MA SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC846BWT1G

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
225mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
150 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
150 at 10 uA at 5 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
65V
Collector-base Voltage
80V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC846BWT1GOSTR

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Quantity
Price
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ON Semiconductor
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BC846, BC847, BC848
Series
General Purpose
Transistors
NPN Silicon
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
1. FR−5 = 1.0 x 0.75 x 0.062 in.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 7
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance,
Junction and Storage Temperature
These transistors are designed for general purpose amplifier
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Junction−to−Ambient
Characteristic
A
= 25°C
Rating
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
Symbol
Symbol
T
V
V
V
R
J
P
CEO
CBO
EBO
, T
I
qJA
C
D
stg
−55 to
Value
+150
Max
100
150
833
6.0
6.0
5.0
65
45
30
80
50
30
1
mAdc
°C/W
Unit
Unit
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
1
XX
M
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
2
MARKING DIAGRAM
http://onsemi.com
BASE
1
3
= Specific Device Code
= Month Code
= Pb−Free Package
XX MG
COLLECTOR
Publication Order Number:
SC−70/SOT−323
G
EMITTER
3
CASE 419
2
STYLE 3
BC846AWT1/D

Related parts for BC846BWT1G

BC846BWT1G Summary of contents

Page 1

BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mA) C Collector −Emitter Breakdown Voltage ( mA Collector −Base Breakdown Voltage ( mA) C Emitter −Base Breakdown Voltage ...

Page 3

I , COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1 0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 ...

Page 4

T A 1.6 1 0.8 0.4 0 0.02 0.1 1 BASE CURRENT (mA) B Figure 5. Collector Saturation Region 10 ...

Page 5

I , COLLECTOR CURRENT (A) C Figure 9. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 ...

Page 6

0 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2 BASE CURRENT (mA) B Figure 13. Collector Saturation Region ...

Page 7

I , COLLECTOR CURRENT (A) C Figure 17. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 ...

Page 8

T A 1.6 1 0.8 0.4 0 0.02 0.1 1 BASE CURRENT (mA) B Figure 21. Collector Saturation Region 10 ...

Page 9

I , COLLECTOR CURRENT (A) C Figure 25. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 ...

Page 10

T A 1.6 1 0.8 0.4 0 0.02 0.1 1 BASE CURRENT (mA) B Figure 29. Collector Saturation Region 10 ...

Page 11

S 0.1 Thermal Limit 0.01 0.001 COLLECTOR EMITTER VOLTAGE (V) CE Figure 33. Safe Operating Area for BC846A, BC846B 1 0.1 0.01 0.001 0 0.1 0.01 0.001 ...

Page 12

... DEVICE ORDERING AND SPECIFIC MARKING INFORMATION Device Specific Marking Code BC846AWT1G BC846BWT1G BC847AWT1G BC847BWT1G BC847CWT1G BC847CWT3G BC848AWT1G BC848BWT1G BC848CWT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe- cifications Brochure, BRD8011/D. ...

Page 13

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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