BFN 27 E6327 Infineon Technologies, BFN 27 E6327 Datasheet
BFN 27 E6327
Specifications of BFN 27 E6327
SP000014782
Related parts for BFN 27 E6327
BFN 27 E6327 Summary of contents
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PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN26 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type BFN27 Maximum Ratings Parameter ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage I = 100 µ ...
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DC current gain BFN 25/ Collector current I = ...
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Transition frequency BFN 25/ MHz Total power dissipation P 400 mW 300 250 200 150 100 50 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...