MMBT2907AM3T5G ON Semiconductor, MMBT2907AM3T5G Datasheet

TRANS PNP GP 60V 600MA SOT-723

MMBT2907AM3T5G

Manufacturer Part Number
MMBT2907AM3T5G
Description
TRANS PNP GP 60V 600MA SOT-723
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBT2907AM3T5G

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
265mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-723
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

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MMBT2907AM3T5G
PNP General Purpose
Transistor
SOT−23 three−leaded device. It is designed for general purpose
amplifier applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
The MMBT2907AM3T5G device is a spin−off of our popular
Reduces Board Space
This is a Halide−Free Device
This is a Pb−Free Device
FR−5 Board (Note 1)
T
Derate above 25°C
Junction−to−Ambient
Alumina Substrate, (Note 2) T
Derate above 25°C
Junction−to−Ambient
A
= 25°C
Characteristic
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJA
C
D
D
stg
−55 to
Value
−600
+150
−5.0
Max
−60
−60
265
470
640
195
2.1
5.1
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT2907AM3T5G SOT−723
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
Device
1
ORDERING INFORMATION
AC
M
2
http://onsemi.com
BASE
1
= Specific Device Code
= Date Code
CASE 631AA
(Pb−Free)
Package
SOT−723
STYLE 1
COLLECTOR
Publication Order Number:
EMITTER
3
2
MMBT2907AM3/D
8000/Tape & Reel
Shipping
MARKING
DIAGRAM
AC M

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MMBT2907AM3T5G Summary of contents

Page 1

... MMBT2907AM3T5G PNP General Purpose Transistor The MMBT2907AM3T5G device is a spin−off of our popular SOT−23 three−leaded device designed for general purpose amplifier applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space premium. ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note −10 mAdc Collector −Base Breakdown Voltage (I = −10 mAdc Emitter−Base Breakdown Voltage (I = −10 mAdc, ...

Page 3

INPUT = PRF = 150 PPS 200 RISE TIME ≤ 2.0 ns P.W. < 200 ns 1 OSCILLOSCOPE 0 RISE TIME ≤ 5 -16 V 200 ns Figure 1. Delay ...

Page 4

-10 V 2.0 CE 1.0 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -1.0 -0 -1 -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 ...

Page 5

TYPICAL SMALL−SIGNAL Characteristics 10 8.0 = 430 -1.0 mA -500 mA 560 W s - -100 mA, R 4 ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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