BFN 24 E6327 Infineon Technologies, BFN 24 E6327 Datasheet

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BFN 24 E6327

Manufacturer Part Number
BFN 24 E6327
Description
TRANSISTOR RF NPN 250V SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFN 24 E6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
250V
Vce Saturation (max) @ Ib, Ic
400mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Power - Max
360mW
Frequency - Transition
70MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
70 MHz
Collector- Emitter Voltage Vceo Max
250 V
Continuous Collector Current
0.2 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFN24E6327XT
SP000014784
NPN Silicon High-Voltage Transistors
Type
BFN24
BFN26
Maximum Ratings
Parameter
Collector-emitter voltage
BFN24
BFN26
Collector-base voltage
BFN24
BFN26
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
1
Pb-containing package may be available upon special request
S
Suitable for video output stages in TV sets
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: BFN27 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
and switching power supplies
74 °C
Marking
FHs
FJs
1)
1=B
1=B
1
Pin Configuration
Symbol
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
2=E
2=E
3=C
3=C
3
-65 ... 150
Value
250
300
250
300
200
500
100
200
360
150
6
BFN24, BFN26
Package
SOT23
SOT23
2007-04-20
1
Unit
V
mA
mW
°C
2

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BFN 24 E6327 Summary of contents

Page 1

NPN Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type BFN24 BFN26 Maximum Ratings ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BFN24 mA BFN26 C B ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA MHz C CE Collector-base capacitance MHz CB = 25°C, unless otherwise specified A ...

Page 4

DC current gain BFN 24/ Collector ...

Page 5

Transition frequency parameter GHz CE BFN 24/ MHz Total power dissipation P 400 mW 300 250 200 ...

Page 6

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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