NST846BF3T5G ON Semiconductor, NST846BF3T5G Datasheet

NST846BF3T5G

Manufacturer Part Number

NST846BF3T5G

Description

TRANSISTOR GP NPN 65V SOT-1123

Manufacturer

ON Semiconductor

Datasheet

1.NST846BF3T5G.pdf (4 pages)

Specifications of NST846BF3T5G

Transistor Type

NPN

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

65V

Vce Saturation (max) @ Ib, Ic

600mV @ 5mA, 100mA

Dc Current Gain (hfe) (min) @ Ic, Vce

200 @ 2mA, 5V

Power - Max

290mW

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SOT-1123

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NST846BF3T5G

Manufacturer:

ON Semiconductor

Quantity:

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NST846BF3T5G

NPN General Purpose

Transistor

SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for

general purpose amplifier applications and is housed in the SOT−1123

surface mount package. This device is ideal for low−power surface

mount applications where board space is at a premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. 100 mm

2. 500 mm

January, 2009 − Rev. 0

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector −Emitter Voltage

Collector −Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

Junction and Storage Temperature Range

Total Device Dissipation, T

Thermal Resistance,

Total Device Dissipation, T

Thermal Resistance,

The NST846BF3T5G device is a spin−off of our popular

Low V

Reduces Board Space

This is a Halide−Free Device

This is a Pb−Free Device

Derate above 25°C

Junction−to−Ambient

Derate above 25°C

Junction−to−Ambient

Junction−to−Lead 3

, 200−450

CE(sat)

1 oz, copper traces.

Characteristic

, ≤ 0.25 V

Rating

= 25°C

Symbol

(Note 1)

(Note 2)

, T

CEO

CBO

EBO

YJL

qJA

stg

−55 to

Value

+150

Max

100

290

432

347

360

143

6.0

2.3

2.8

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

NST846BF3T5G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

ORDERING INFORMATION

BASE

MARKING DIAGRAM

http://onsemi.com

NST846BF3T5G

CASE 524AA

SOT−1123

= Device Code

= Date Code

STYLE 1

SOT−1123

(Pb−Free)

COLLECTOR

Package

V M

EMITTER

Publication Order Number:

8000/Tape & Reel

NST846BF3/D

Shipping

†

Related parts for NST846BF3T5G

NST846BF3T5G Summary of contents

Page 1

... NST846BF3T5G NPN General Purpose Transistor The NST846BF3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space premium ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I C Collector −Emitter Breakdown Voltage (I C Collector −Base Breakdown Voltage ( mA) C Emitter−Base Breakdown Voltage (I = 1.0 mA) E Collector Cutoff Current (V (V ...

Page 3

0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 3. Base Emitter Saturation Voltage vs. Collector Current 1.0 0.9 0.8 0.7 0.6 ...

Page 4

... SOLDERING FOOTPRINT* 0.35 0.30 0.25 0.90 DIMENSIONS: MILLIMETERS details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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