TRANSISTOR BIPOLAR PNP 40V SC746

MMBT2131T1G

Manufacturer Part NumberMMBT2131T1G
DescriptionTRANSISTOR BIPOLAR PNP 40V SC746
ManufacturerON Semiconductor
MMBT2131T1G datasheet
 


Specifications of MMBT2131T1G

Transistor TypePNPCurrent - Collector (ic) (max)700mA
Voltage - Collector Emitter Breakdown (max)30VVce Saturation (max) @ Ib, Ic400mV @ 70mA, 700mA
Dc Current Gain (hfe) (min) @ Ic, Vce150 @ 100mA, 3VPower - Max342mW
Mounting TypeSurface MountPackage / CaseSC-74-6
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Collector Cutoff (max)-
Frequency - Transition-  
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MMBT2131T1
General Purpose
Transistors
PNP Bipolar Junction Transistor
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor.
Features
Pb−Free Package is Available
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
C
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
= 25°C
C
Total Power Dissipation @ T
= 85°C
C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
= 25°C
C
Total Power Dissipation @ T
= 85°C
C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Operating and Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Operating to Steady State.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
Symbol
Value
Unit
V
30
V
CEO
V
40
V
CBO
V
5.0
V
EBO
I
700
mA
C
I
350
mA
B
P
342
mW
D
P
178
mW
D
°C/W
R
366
qJA
P
665
mW
D
P
346
mW
D
°C/W
R
188
qJA
°C
T
, T
−55 to +150
J
stg
MMBT2131T1
MMBT2131T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
http://onsemi.com
0.7 AMPERES
30 VOLTS − V
(BR)CEO
342 mW
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
4
5
SC−74
6
CASE 318F
3
STYLE 2
1 2
MARKING DIAGRAM
DB M G
G
DB = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
SC−74
3000/Tape & Reel
SC−74
3000/Tape & Reel
(Pb−Free)
Publication Order Number:
MMBT2131T1/D

MMBT2131T1G Summary of contents

  • Page 1

    ... D °C/W R 188 qJA ° −55 to +150 J stg MMBT2131T1 MMBT2131T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com 0.7 AMPERES 30 VOLTS − V (BR)CEO 342 mW COLLECTOR PINS 2, 5 ...

  • Page 2

    ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector −Base Breakdown Voltage Collector −Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current (V CB Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector −Emitter Saturation Voltage Collector −Emitter Saturation Voltage Base−Emitter Saturation ...

  • Page 3

    V BE(sat) 0.1 V CE(sat) 0.01 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 5. “ON” Voltages 0 85° 100 C B 0.5 0.4 0.3 0.2 0 COLLECTOR ...

  • Page 4

    ... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...