MJD31CT4G ON Semiconductor, MJD31CT4G Datasheet

TRANS PWR NPN 3A 100V DPAK

MJD31CT4G

Manufacturer Part Number
MJD31CT4G
Description
TRANS PWR NPN 3A 100V DPAK
Manufacturer
ON Semiconductor
Datasheet
1.MJD31C1G.pdf (10 pages)

Specifications of MJD31CT4G

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
1.56W
Frequency - Transition
3MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage
100V
Emitter-base Voltage
5V
Collector Current (dc) (max)
3A
Dc Current Gain (min)
25
Power Dissipation
1.56W
Frequency (max)
3MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJD31CT4GOS
MJD31CT4GOS
MJD31CT4GOSTR

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Part Number
Manufacturer
Quantity
Price
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MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
applications.
Features
•
•
•
•
•
•
•
*These ratings are applicable when surface mounted on the minimum pad sizes
© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 8
MAXIMUM RATINGS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
recommended.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Junction
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
Lead Temperature for Soldering Purposes
Designed for general purpose amplifier and low speed switching
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
These are Pb−Free Packages
Derate above 25°C
Derate above 25°C
Temperature Range
Characteristic
Machine Model, C u 400 V
− Peak
Rating
MJD31C, MJD32C
MJD31C, MJD32C
A
C
MJD31, MJD32
MJD31, MJD32
= 25°C
= 25°C
Symbol
Symbol
T
V
R
R
J
V
V
P
P
CEO
, T
T
I
I
qJC
qJA
CB
EB
C
B
D
D
L
stg
−65 to
0.012
+ 150
Max
0.12
1.56
Max
100
100
260
8.3
40
40
15
80
5
3
5
1
1
W/°C
W/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
°C
°C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
1 2
1
2
3
3
POWER TRANSISTORS
ORDERING INFORMATION
40 AND 100 VOLTS
4
4
http://onsemi.com
A
Y
WW
xx
G
3 AMPERES
CASE 369C
CASE 369D
15 WATTS
STYLE 1
STYLE 1
DPAK−3
SILICON
DPAK
Publication Order Number:
= Site Code
= Year
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
DIAGRAMS
MARKING
AYWW
J3xxG
J3xxG
MJD31/D
YWW

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MJD31CT4G Summary of contents

Page 1

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

2 1 (SURFACE MOUNT 0 100 T, TEMPERATURE (°C) Figure 1. Power Derating ...

Page 4

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN) 1000 150°C 25°C 100 −55° 0.01 0 COLLECTOR CURRENT (A) C Figure 6. DC Current Gain 0.5 0.4 0.3 0.2 25°C ...

Page 5

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN) 1000 C ib 100 0 REVERSE VOLTAGE (V) R Figure 12. Capacitance 10 1 0.1 0.01 1 100 T = 25° 100 0.001 ...

Page 6

TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP) 1000 25°C 150°C 100 −55° 0.01 0 COLLECTOR CURRENT (A) C Figure 15. DC Current Gain 0.9 0.8 −55°C 0.7 0.6 ...

Page 7

C ib 100 0 REVERSE VOLTAGE (V) R Figure 21. Capacitance 10 1 0.1 0.01 1 TYPICAL CHARACTERISTICS 100 T = 25° 100 0.001 Figure 22. Current−Gain−Bandwidth Product ...

Page 8

... ORDERING INFORMATION Device MJD31CG MJD31C1G MJD31CRLG MJD31CT4G MJD31T4G MJD32CG MJD32CRLG MJD32CT4 MJD32CT4G MJD32RLG MJD32T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package Type Package DPAK 369C (Pb− ...

Page 9

... DETAIL 0.005 (0.13 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE GAUGE SEATING L2 C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...

Page 10

... Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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