TRANS DARL NPN 2A 100V DPAK

MJD112T4G

Manufacturer Part NumberMJD112T4G
DescriptionTRANS DARL NPN 2A 100V DPAK
ManufacturerON Semiconductor
MJD112T4G datasheet
 


Specifications of MJD112T4G

Transistor TypeNPN - DarlingtonCurrent - Collector (ic) (max)2A
Voltage - Collector Emitter Breakdown (max)100VVce Saturation (max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (max)20µADc Current Gain (hfe) (min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75WFrequency - Transition25MHz
Mounting TypeSurface MountPackage / CaseDPak, TO-252 (2 leads+tab), SC-63
ConfigurationSingleTransistor PolarityNPN
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max100 V
Emitter- Base Voltage Vebo5 VCollector- Base Voltage Vcbo100 V
Maximum Dc Collector Current2 AMaximum Collector Cut-off Current20 uA
Power Dissipation20 WMaximum Operating Temperature+ 150 C
Continuous Collector Current2 ADc Collector/base Gain Hfe Min200, 500, 1000
Minimum Operating Temperature- 65 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesMJD112T4GOS
MJD112T4GOS
MJD112T4GOSTR
  
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MJD112 (NPN)
MJD117 (PNP)
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak
Base Current
Total Power Dissipation @ T
= 25°C
C
Derate above 25°C
Total Power Dissipation (Note1)
@ T
= 25°C
A
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
(Note 1)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 9
1 2
Symbol
Max
Unit
V
100
Vdc
CEO
V
100
Vdc
CB
V
5
Vdc
EB
I
2
Adc
1
C
4
2
I
50
mAdc
B
P
20
W
D
0.16
W/°C
P
W
D
1.75
W/°C
0.014
T
, T
−65 to +150
°C
J
stg
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Symbol
Max
Unit
R
6.25
°C/W
qJC
R
71.4
°C/W
qJA
1
http://onsemi.com
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS, 20 WATTS
MARKING
DIAGRAMS
4
DPAK
AYWW
CASE 369C
J11xG
3
4
DPAK−3
YWW
CASE 369D
J11xG
3
A
= Assembly Location
Y
= Year
WW
= Work Week
x
= 2 or 7
G
= Pb−Free Package
ORDERING INFORMATION
Publication Order Number:
MJD112/D

MJD112T4G Summary of contents

  • Page 1

    MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

  • Page 3

    D = 0.5 0.5 0.3 0.2 0.2 0.1 0.05 0.1 0.07 0.01 0.05 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0 0.7 0.5 dc 0.3 0.2 ...

  • Page 4

    TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD112 125° 25° 800 - 55°C 600 400 300 0.04 0.06 0.1 0.2 0.4 0 COLLECTOR CURRENT (AMP) C 3.4 3 ...

  • Page 5

    NPN MJD112 + 0.8 *APPLIED FOR I /I < 0.8 25°C TO 150°C - 1.6 *q FOR V - 2.4 VC CE(sat) - 55°C TO 25°C - 3.2 25°C TO 150°C q FOR ...

  • Page 6

    ... Device MJD112 MJD112G MJD112−001 MJD112−1G MJD112RL MJD112RLG MJD112T4 MJD112T4G MJD117 MJD117G MJD117−001 MJD117−1G MJD117T4 MJD117T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

  • Page 7

    ... DETAIL 0.005 (0.13 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE GAUGE SEATING L2 C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6 ...

  • Page 8

    ... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...