MJD112T4G ON Semiconductor, MJD112T4G Datasheet - Page 3

• Manufacturer Part Number: MJD112T4G
• Description: TRANS DARL NPN 2A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD112T4G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 20µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 2A, 3V
• Power - Max: 1.75W
• Frequency - Transition: 25MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 2 A
• Maximum Collector Cut-off Current: 20 uA
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 2 A
• Dc Collector/base Gain Hfe Min: 200, 500, 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD112T4GOS; MJD112T4GOS; MJD112T4GOSTR

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
J(pk)
There are two limitations on the power handling ability of
The data of Figures 5 and 6 is based on T
0.07
0.05
0.03
0.02
0.01
0.7
0.5
0.3
0.2
0.1
0.7
0.5
0.3
0.2
0.1
10
< 150_C. T
7
5
3
2
1
1
0.01
2
SINGLE PULSE
Figure 4. Maximum Rated Forward Biased
0.01
3
0.02 0.03 0.05
D = 0.5
T
CURVES APPLY BELOW RATED V
V
0.05
J
CE
0.1
= 150°C
0.2
5
J(pk)
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1 ms
7
may be calculated from the data in
Safe Operating Area
10
0.1
20
dc
5 ms
0.2 0.3
30
ACTIVE−REGION SAFE−OPERATING AREA
CEO
500 ms
J(pk)
50 70
= 150_C; T
0.5
100 ms
Figure 3. Thermal Response
C
100
http://onsemi.com
− V
1
t, TIME OR PULSE WIDTH (ms)
CE
C
200
2
3
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
3
2.5
1.5
0.5
T
J(pk)
qJC(t)
qJC
A
2
1
0
200
100
= 6.25°C/W
70
50
30
20
10
- T
T
25
20
15
10
0.04
= r(t) R
5
5
0
C
25
C
= P
0.06
qJC
(pk)
10
1
0.1
q
JC(t)
50
0.2
20
PNP
NPN
SURFACE
Figure 5. Power Derating
V
MOUNT
R
Figure 6. Capacitance
T
, REVERSE VOLTAGE (VOLTS)
30
A
0.4
T, TEMPERATURE (°C)
0.6
75
50
P
(pk)
1
T
DUTY CYCLE, D = t
C
100
t
1
C
2
ib
100
t
2
200 300
4
6
T
1
C
/t
125
10
2
= 25°C
500
C
ob
20
1000
40
15