MJD112T4G ON Semiconductor, MJD112T4G Datasheet - Page 4

TRANS DARL NPN 2A 100V DPAK

MJD112T4G

Manufacturer Part Number
MJD112T4G
Description
TRANS DARL NPN 2A 100V DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJD112T4G

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (max)
20µA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75W
Frequency - Transition
25MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
2 A
Maximum Collector Cut-off Current
20 uA
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
2 A
Dc Collector/base Gain Hfe Min
200, 500, 1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJD112T4GOS
MJD112T4GOS
MJD112T4GOSTR

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800
600
400
300
3.4
2.6
2.2
1.8
1.4
0.6
2.2
1.8
1.4
0.6
0.2
6 k
4 k
3 k
2 k
1 k
0.04
3
1
1
0.04
0.1
NPN MJD112
0.5 A
I
C
V
0.06
=
0.06
BE(sat)
0.2
T
V
J
= 25°C
CE(sat)
@ I
0.1
0.1
T
J
1 A
0.5
C
@ I
= 125°C
/I
I
I
- 55°C
C
B
C
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
C
= 250
/I
B
I
B
0.2
1
25°C
0.2
= 250
2 A
, BASE CURRENT (mA)
2
0.4
0.4
5
TYPICAL ELECTRICAL CHARACTERISTICS
4 A
0.6
0.6
10
Figure 8. Collector Saturation Region
V
BE
1
1
@ V
20
T
Figure 9. “On Voltages
J
Figure 7. DC Current Gain
CE
= 125°C
V
2
2
= 3 V
CE
http://onsemi.com
50
= 3 V
100
4
4
4
800
600
400
300
3.4
2.6
2.2
1.8
1.4
0.6
2.2
1.8
1.4
0.6
0.2
6 k
4 k
3 k
2 k
1 k
0.04
3
1
1
0.04
0.1
PNP MJD117
V
0.06
0.5 A
V
0.06
I
BE(sat)
C
0.2
CE(sat)
T
=
J
= 25°C
@ I
0.1
1 A
0.1
@ I
- 55°C
0.5
C
C
/I
T
I
I
/I
C
B
C
C
B
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
= 250
= 125°C
= 250
I
B
0.2
1
0.2
, BASE CURRENT (mA)
2 A
25°C
2
0.4
0.4
5
0.6
0.6
V
10
4 A
BE
1
@ V
1
20
CE
T
J
= 3 V
= 125°C
V
2
2
CE
50
= 3 V
100
4
4

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