MJD112T4G ON Semiconductor, MJD112T4G Datasheet - Page 6

• Manufacturer Part Number: MJD112T4G
• Description: TRANS DARL NPN 2A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD112T4G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 20µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 2A, 3V
• Power - Max: 1.75W
• Frequency - Transition: 25MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 2 A
• Maximum Collector Cut-off Current: 20 uA
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 2 A
• Dc Collector/base Gain Hfe Min: 200, 500, 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD112T4GOS; MJD112T4GOS; MJD112T4GOSTR

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MJD112
MJD112G
MJD112−001
MJD112−1G
MJD112RL
MJD112RLG
MJD112T4
MJD112T4G
MJD117
MJD117G
MJD117−001
MJD117−1G
MJD117T4
MJD117T4G
Device
Package Type
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
DPAK−3
DPAK−3
DPAK−3
DPAK−3
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
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6
Package
369C
369D
369C
369D
369C
1800 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
75 Units / Rail
75 Units / Rail
Shipping
†